Fermi edge singularity in II-VI semiconductor resonant tunneling structures

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

  Ruth M ^a   Slobodskyy, T ^a   Gould, C ^a   Schmidt, G ^a   Molenkamp, L W ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; FERMIONS; GROUND STATE; MAGNETIC FIELD MEASUREMENT; MAGNETIC FIELDS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; RESONANT TUNNELING; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; TUNNELING (EXCAVATION); VEGETATION;

APPLIED MAGNETIC FIELDS; CDSE QUANTUM DOTS; CURRENT ENHANCEMENTS; FERMI EDGE SINGULARITIES; FERMI EDGES; FIELD DEPENDENCES; FINE STRUCTURES; GENERAL FEATURES; PARTICLE EFFECTS; RESONANT TRANSPORTS; RESONANT TUNNELING STRUCTURES; SEMI-CONDUCTORS; SEMICONDUCTOR HETEROSTRUCTURE; TUNNEL CURRENTS; TUNNELING CURRENTS;

MAGNETIC FIELD EFFECTS;

EID: 55849141666     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3009284     Document Type: Article

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