Solution-processed trilayer inorganic dielectric for high performance flexible organic field effect transistors

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

  Tan, H S ^a   Kulkarni, S R ^a   Cahyadi, T ^a   Lee, P S ^a   Mhaisalkar, S G ^a   Kasim, J ^b   Shen, Z X ^b   Zhu, F R ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ABS RESINS; ARCHITECTURAL ACOUSTICS; BENDING (DEFORMATION); COLLOIDS; GATE DIELECTRICS; GATES (TRANSISTOR); GELATION; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; SILICA; TRANSISTORS;

BENDING RADIUSES; BENDING STRAINS; DRIVING VOLTAGES; ELECTRICAL DEGRADATIONS; IN FIELDS; INORGANIC DIELECTRICS; INTERFACIAL MORPHOLOGIES; INTERMOLECULAR COUPLINGS; OFF CURRENTS; ORGANIC FIELD EFFECT TRANSISTORS; PENTACENE; PLASTIC SUBSTRATES; PROCESSABLE; SATURATION MOBILITIES; SEMI-CONDUCTORS; SOL - GELS; TRILAYER;

FIELD EFFECT TRANSISTORS;

EID: 55849123662     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013845     Document Type: Article

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