Free-standing ZnO nanorods and nanowalls by aqueous solution method

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 9, 2008, Pages 4688-4691

  Kim, Dae Hee ^a   Lee, Sam Dong ^a   Kim, Kyoung Kook ^b   Park, Gyeong Su ^b   Lee, Ji Myon ^c   Kim, Sang Woo ^a  

^a Kumoh National Institute of Technology   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Sunchon National University   (South Korea)

Author keywords

Aqueous solution method; Free standing; ZnO nanorods; ZnO nanowalls

Indexed keywords

AQUEOUS SOLUTION METHOD; AQUEOUS SOLUTION METHODS; C -AXIS; CRYSTALLINITY; DEEP LEVELS; FREE EXCITONS; FREE STANDING; GROWTH CONDITIONS; GROWTH ORIENTATIONS; HEXAGONAL STRUCTURES; LOW TEMPERATURES; NANOWALLS; ZINC ACETATES; ZINC NITRATES; ZNO NANORODS; ZNO NANOSTRUCTURES; ZNO NANOWALLS;

FILM GROWTH; NANOSTRUCTURES; NITRATES; OPTICAL PROPERTIES; SEMICONDUCTING ZINC COMPOUNDS; SOLUTIONS; ZINC; ZINC ALLOYS; ZINC COMPOUNDS; ZINC OXIDE;

NANORODS;

METHENAMINE; NANOMATERIAL; NANOPARTICLE; NITRATE; UNCLASSIFIED DRUG; WATER; ZINC ACETATE; ZINC DERIVATIVE; ZINC NITRATE; ZINC OXIDE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; GENETIC PROCEDURES; METHODOLOGY; NANOTECHNOLOGY; SOLUTION AND SOLUBILITY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BIOSENSING TECHNIQUES; CHEMISTRY; METHENAMINE; MICROSCOPY, ELECTRON, TRANSMISSION; MODELS, CHEMICAL; NANOPARTICLES; NANOSTRUCTURES; NANOTECHNOLOGY; NITRATES; SOLUTIONS; TEMPERATURE; WATER; X-RAY DIFFRACTION; ZINC ACETATE; ZINC COMPOUNDS; ZINC OXIDE;

EID: 55849114894     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.IC42     Document Type: Conference Paper

References (14)

1. D. C. Look, Mater. Sci. Eng., B 80, 383 (2001).
2. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
3. H. T. Wang, B. S. Kang, F. Ren, L. C. Tien, P. W. Sadik, D. P. Norton, S. J. Pearton, and J. Lin, Appl. Phys. Lett. 86, 243503 (2005).
4. M. Law, L. E. Greene, J. C. Johnson, R. Saykally, and P. Yang, Nat. Mater. 4, 255 (2005).
5. S.-W. Kim, Sz. Fujita, M.-S. Yi, and D. H. Yoon, Appl. Phys. Lett. 88, 253114 (2006).
6. S.-W. Kim, H.-K. Park, M.-S. Yi, N.-M. Park, J.-H. Park, S.-H. Kim, S.-L. Maeng, C.-J. Choi, and S.-E. Moon, Appl. Phys. Lett. 90, 033107 (2007).
7. W. I. Park, Y. H. Jun, S. W. Jung, and G.-C. Yi, Appl. Phys. Lett. 82, 964 (2003).
8. B. H. Kong and H. K. Cho, J. Cryst. Growth 289, 370 (2006).
9. L. Vayssieres, K. Keis, S. Lindquist, and A. Hagfelt, J. Phys. Chem. B 105, 3350 (2001).
10. Z. R. Tian, J. A. Voigt, J. Liu, B. Mckenzie, and M. J. Mcdermott, J. Am. Chem. Soc. 124, 12954 (2002).
11. L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Johnson, Y. Zhang, R. J. Saykally, and P. Yang, Angew. Chem., Int. Ed. 42, 3031 (2003).
12. B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki, and H. Koinuma, J. Phys. Chem. B 108, 10899 (2004).
13. J. W. P. Hsu, D. R. Tallant, R. L. Simpson, N. A. Missert, and R. G. Copeland, Appl. Phys. Lett. 88, 252103 (2006).
14. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. 68, 403 (1996).