Observation of asymmetric wafer bending for 3C-SiC thin films grown on misoriented silicon substrates

Materials Research Society Symposium Proceedings

Volumn 1069, Issue , 2008, Pages 163-168

  Zielinski, Marcin ^a   Portail, Marc ^b   Chassagne, Thierry ^a   Kret, Slawomir ^c   Nemoz, Maud ^b   Cordier, Yvon ^b  

^a SAVOIE TECHNOLAC   (France)

^b CRHEA CNRS   (France)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

MORPHOLOGY; SILICON CARBIDE; SUBSTRATES;

DEFECT PATTERNS; LAYER MORPHOLOGY; MISMATCH STRAIN; OFF-CUT ANGLES; ORIENTED SAMPLE; SILICON SUBSTRATES; WAFER DEFORMATION; WAFER THICKNESS;

SILICON WAFERS;

EID: 55849101083     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1069-d07-09     Document Type: Conference Paper

References (6)

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