Room temperature ferromagnetic properties of ZnFeO thin films prepared by thermal oxidation of ZnFeS thin films

Materials Chemistry and Physics

Volumn 112, Issue 3, 2008, Pages 1106-1109

  Feng, Q J ^a,b   Shen, D Z ^a   Zhang, J Y ^a   Li, B H ^a   Zhang, Z Z ^a   Lu, Y M ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b LIAONING NORMAL UNIVERSITY   (China)

Author keywords

Ferromagnetic properties; MOCVD; Thermal oxidation; ZnFeO thin films

Indexed keywords

ANNEALING; ATOMIC PHYSICS; ATOMS; CHEMICAL EQUIPMENT; CHEMICAL OXYGEN DEMAND; CORUNDUM; FERROMAGNETIC MATERIALS; FERROMAGNETISM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; OXIDATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SOLIDS; THICK FILMS; THIN FILMS; VAPOR DEPOSITION; X RAY ANALYSIS; ZINC;

FE ATOMS; FE CONTENTS; FERROMAGNETIC PROPERTIES; GRAIN SIZES; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; MOCVD; OPTIMUM ANNEALING; PLANE SAPPHIRES; ROOM TEMPERATURE FERROMAGNETISMS; ROOM TEMPERATURES; SCANNING ELECTRON MICROSCOPES; THERMAL OXIDATION; THERMAL OXIDATIONS; X-RAY DIFFRACTIONS; ZN ATOMS; ZNFEO THIN FILMS; ZNFES THIN FILMS;

FILM PREPARATION;

EID: 55749106217     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.07.037     Document Type: Article

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