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Surface and Coatings Technology

Volumn 203, Issue 5-7, 2008, Pages 826-829

Atmospheric-pressure plasma pretreatment for direct bonding of silicon wafers at low temperatures

(5) Eichler, M a Michel, B b Thomas, M a Gabriel, M c Klages, C P a,b

a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST (Germany)

b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG (Germany)

c SUSS MicroTec Lithography GmbH (United States)

Author keywords

Atmospheric pressure; Bonding; Low temperature; Packaging; Plasma; Silicon wafer

Indexed keywords

ANNEALING; ATMOSPHERIC COMPOSITION; ATMOSPHERIC PRESSURE; ATMOSPHERICS; CHIP SCALE PACKAGES; CLIMATOLOGY; ELECTRIC DISCHARGES; ELECTRONIC EQUIPMENT MANUFACTURE; ELECTRONICS PACKAGING; METEOROLOGY; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; WAFER BONDING;

ANNEALING TEMPERATURES; BOND ENERGIES; CRACK OPENINGS; DIELECTRIC BARRIER DISCHARGES; DIRECT BONDINGS; DIRECT WAFER BONDINGS; EXPERIMENTAL PARAMETERS; EXPERIMENTAL SET-UP; LOW TEMPERATURE; LOW TEMPERATURES; PLASMA TREATMENTS; PRETREATMENT; PROCESS GASSES;

ATMOSPHERIC TEMPERATURE;

EID: 55749083375 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/j.surfcoat.2008.06.054 Document Type: Article

Times cited : (27)

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