Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As 2 and As 4 arsenic sources

Applied Surface Science

Volumn 255, Issue 3, 2008, Pages 737-739

  Kawaharazuka, A ^a   Yoshiba, I ^a   Horikoshi, Y ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Area selective epitaxy; As 2; As 4; GaAs; Molecular beam epitaxy

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; OLIGOMERS; SEMICONDUCTING GALLIUM;

AREA SELECTIVE; ARSENIC PRESSURE; FACET FORMATION; GAAS; MIGRATION ENHANCED EPITAXY;

ARSENIC;

EID: 55649103465     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.033     Document Type: Article

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