Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

Chinese Optics Letters

Volumn 6, Issue 10, 2008, Pages 773-775

  Wang, Congjuan ^a   Han, Zhaoxia ^b   Jin, Yunxia ^a   Shao, Jianda ^a   Fan, Zhengxiu ^a  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b HENAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; FILM PREPARATION; HAFNIUM OXIDES; LOW-K DIELECTRIC; SILICA;

1064 NM; ANTIREFLECTION; AR COATINGS; CENTER WAVELENGTH; INTERFACIAL LAYER; LASER INDUCED DAMAGE THRESHOLDS; QUARTER WAVELENGTH OPTICAL THICKNESS;

LASER DAMAGE;

EID: 55649102784     PISSN: 16717694     EISSN: None     Source Type: Journal    
DOI: 10.3788/col20080610.0773     Document Type: Article

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