The study of damage profiles in MeV Si+-implanted LiNbO3 crystals by Rutherford backscattering and oxygen resonance scattering

Journal of Physics D: Applied Physics

Volumn 29, Issue 2, 1996, Pages 419-423

  Shi, Bo Rong ^a,b   Cue, Nelson ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRON RESONANCE; ELECTROOPTICAL MATERIALS; HELIUM; ION IMPLANTATION; LITHIUM COMPOUNDS; NIOBIUM; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCATTERING; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

CRYSTAL DAMAGE PROFILES; HELIUM IONS; IMPLANT DOSE; NIOBIUM ATOMS; OXYGEN RESONANCE SCATTERING; RUTHERFORD CHANNELING; STOPPING POWER;

CRYSTAL DEFECTS;

EID: 5544325473     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/2/020     Document Type: Article

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