Computer simulation of some aspects of ion implantation in ULSI devices

Radiation Effects and Defects in Solids

Volumn 141, Issue 1-4, 1997, Pages 199-209

  Faye, M M ^a   Benassayag, G ^b   Martinez, A ^c   Claverie, A ^b  

^a UNIVERSITÉ CHEIKH ANTA DIOP   (Senegal)

^b CEMES CNRS   (France)

^c LAAS CNRS   (France)

Author keywords

Computer simulation; Ion implantation; ULSI

Indexed keywords

AMORPHOUS MATERIALS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL DEFECTS; ION IMPLANTATION; MONTE CARLO METHODS; RADIATION DAMAGE; SEMICONDUCTOR DEVICES; SUBROUTINES;

SOFTWARE PACKAGE ION IMPLANTATION PROCESS SIMULATOR (IPROS);

ULSI CIRCUITS;

EID: 5544310523     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159708211570     Document Type: Article

References (9)

1. M.T. Robinson and I.M. Torrens, Phys. Rev. 9 (1974) 5008.
2. J.P. Biersack and L.G. Haggmark, Nucl. Instrum. and Methods 174 (1980) 257.
3. J.F. Ziegler, J.P. Biersack and U. Littmark, "The Stopping and Range of Ions in Solids", Vol. 1, Pergamon Press (1985).
4. J. Lindhard and M. Scharff, Phys. Rev. 124 (1961) 128.
5. M. Tamura, Mat. Sci. Reports 6 (1991) 141.
6. L. Laanab, C. Bergaud, M.M. Faye, J. Faure, A. Martinez and A. Claverie, Mat. Res. Soc. Symp. Proc. 279 (1993) 381.
7. C. Bonafos, L. Laanab, M.M. Faye, D. Alquier, A. Martinez, D. Mathiot and A. Claverie, Proc. of the 9th Int. Conf. on Ion Beam Modifications of Materials (1995) 789.
8. M. Tamura and M Horiuchi, Jap. J. of Appl. Phys 27 (1988) 2209.
9. L. Laanab, M.M. Faye, J. Beauvillain, N. Gessinn, A. Yahiamessaoud, A. Martinez and A. Claverie, Electron Microscopy, Vol. 2, EUREM'92, Granada, Spain (1992) 137