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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2331-2334

Study on improving InxGa1-xAs/InyGa1-yP heterointerfaces in gas-source molecular beam expitaxy

(2) Yan, C H a,b Tu, C W a

a UNIVERSITY OF CALIFORNIA (United States)

b UNIVERSITY OF NEBRASKA LINCOLN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5544275442 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.588853 Document Type: Article

Times cited : (1)

References (13)

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