Bi-doping effects on the transport properties in La0.7-xBi xSr0.3MnOy

Physica B: Condensed Matter

Volumn 352, Issue 1-4, 2004, Pages 330-336

  Ahmed, A M ^a  

^a SOHAG UNIVERSITY   (Egypt)

Author keywords

Electrical resistivity; Metal semiconductor transition; Thermoelectric power

Indexed keywords

ACTIVATION ENERGY; BISMUTH; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; PHASE TRANSITIONS; SUPERCONDUCTING TRANSITION TEMPERATURE; TRANSPORT PROPERTIES;

DC ELECTRICAL RESISTIVITY; FERROMAGNETIC TRANSITION TEMPERATURE; METAL-SEMICONDUCTOR TRANSITION; THERMOELECTRIC POWER (TEP);

LANTHANUM COMPOUNDS;

EID: 5544264995     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.08.008     Document Type: Article

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