Effect of oxygen partial pressure on properties of Nb-doped in 2O3 thin films

Materials Chemistry and Physics

Volumn 112, Issue 1, 2008, Pages 136-139

  Gupta, R K ^a   Ghosh, K ^a   Patel, R ^a   Mishra, S R ^b   Kahol, P K ^a  

^a MISSOURI STATE UNIVERSITY   (United States)

^b University of Memphis   (United States)

Author keywords

Hall effect; Indium oxide; Mobility; Pulsed laser deposition; Transparent electrode

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; DEPOSITION; ENERGY GAP; HALL EFFECT; HALL MOBILITY; OPTICAL PROPERTIES; OXYGEN; PARTIAL PRESSURE; PRESSURE EFFECTS; PULSED LASER DEPOSITION; PULSED LASERS;

EFFECT OF OXYGEN; HIGH MOBILITY; INDIUM OXIDE; LOW RESISTIVITY; OXYGEN PRESSURE; PULSED-LASER DEPOSITION TECHNIQUE; STRUCTURAL AND OPTICAL PROPERTIES; TRANSPARENT ELECTRODE;

THIN FILMS;

EID: 55349140030     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.05.025     Document Type: Article

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