Role of ge switch in phase transition: Approach using atomically controlled GeTe/Sb2Te3 superlattice

Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 2, 2008, Pages 5763-5766

  Tominaga, Juniji ^a   Fons, Paul ^a   Kolobov, Alexander ^a   Shima, Takayuki ^a   Chong, Tow Chong ^b   Zhao, Rong ^a   Lee, Hock Koon ^a   Shi, Luping ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

Ab initio simulation; Amorphous; Crystal; GeSbTe alloy; Phase transition; Refractive index

Indexed keywords

ANTIMONY; ANTIMONY ALLOYS; DIFFERENTIAL SCANNING CALORIMETRY; GERMANIUM; LASER INTERFEROMETRY; METALLIC COMPOUNDS; OPTICAL PROPERTIES; POWDERS; REFRACTIVE INDEX; SOLID STATE DEVICES; SYSTEM THEORY; TELLURIUM COMPOUNDS; THERMODYNAMIC PROPERTIES;

AB-INITIO SIMULATION; AMORPHOUS; CRYSTAL STATES; CUBIC UNIT CELLS; GE ATOMS; GESB-TE; GESBTE ALLOY; IN PHASE TRANSITIONS; OPTICAL MEDIAS; REWRITABLE; SIMPLE MODELS; SWITCH ON; SWITCHING MECHANISMS; THERMAL PROPERTIES; UNIT CELLS;

PHASE TRANSITIONS;

EID: 55249117514     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5763     Document Type: Article

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