Gadolinium calcium oxyborate piezoelectric single crystals for ultrahigh temperature (≥1000 °c) applications

Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

  Zhang, Shujun ^a   Frantz, Eric ^a   Xia, Ru ^a   Everson, William ^a   Randi, Joseph ^a   Snyder, David W ^a   Shrout, Thomas R ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM; CRYSTALLOGRAPHY; CRYSTALS; ELECTROMECHANICAL DEVICES; GADOLINIUM; PIEZOELECTRICITY; POWDERS; RARE EARTH ELEMENTS; RHENIUM;

CZOCHRALSKI PULLING TECHNIQUES; GADOLINIUM CALCIUM OXYBORATE; GROWN CRYSTALS; HIGH RESISTIVITIES; MECHANICAL QUALITY FACTORS; OPTIMUM LENGTHS; PIEZOELECTRIC COEFFICIENTS; PIEZOELECTRIC SINGLE CRYSTALS; SENSING APPLICATIONS; SPACE GROUPS; THICKNESS SHEARS; ULTRAHIGH TEMPERATURES;

SINGLE CRYSTALS;

EID: 55249086982     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3000560     Document Type: Article

References (26)

1. T. R. Shrout, R. Eitel, and C. A. Randall, in Piezoelectric Materials in Devices, edited by, N. Setter, (EPFL Swiss Federal Institute of Technology, Switzerland, 2002), p. 413.
2. R. C. Turner, P. A. Fuierer, R. E. Newnham, and T. R. Shrout, Appl. Acoust. 0003-682X 10.1016/0003-682X(94)90091-4 41, 299 (1994).
3. M. J. Schulz, M. J. Sundaresan, J. McMichael, D. Clayton, R. Sadler, and B. Nagel, J. Intell. Mater. Syst. Struct. 1045-389X 10.1177/1045389X03038577 14, 693 (2003).
4. D. Damjanovic, Curr. Opin. Solid State Mater. Sci. 1359-0286 10.1016/S1359-0286(98)80009-0 3, 469 (1998).
5. S. J. Zhang, J. Luo, D. W. Snyder, and T. R. Shrout, in Handbook of Advance Dielectric Piezoelectric and Ferroelectric Mater: Synthesis Characterization and Applications, edited by, Z. G. Ye, (Woodhead, Cambridge, 2008), Chap..
6. H. Fritze and H. L. Tuller, Appl. Phys. Lett. 0003-6951 10.1063/1.1345797 78, 976 (2001).
7. H. Ogi, N. Nakamura, K. Sato, M. Hirao, and S. Uda, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 0885-3010 10.1109/TUFFC.2003.1201468 50, 553 (2003).
8. H. Fritze, J. Electroceram. 1385-3449 10.1007/s10832-006-9735-1 17, 625 (2006).
9. E. Philippot, A. Ibanez, A. Goiffon, M. Cochez, A. Zarka, B. Capell, J. Schwartzel, and J. Detaint, J. Cryst. Growth 0022-0248 10.1016/0022-0248(93) 90852-N 130, 195 (1993).
10. P. Krempl, G. Schleinzer, and W. Wallnofer, Sens. Actuators, A 0924-4247 10.1016/S0924-4247(97)80289-0 61, 361 (1997).
11. Y. T. Fei, B. H. T. Chai, C. A. Ebbers, Z. M. Liao, K. I. Schaffers, and P. Thelin, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2006.01.031 290, 301 (2006).
12. S. J. Zhang, J. G. Zhang, Z. X. Cheng, G. Y. Zhou, J. R. Han, and H. C. Chen, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(99)00071-8 203, 168 (1999).
13. G. Aka, F. Salin, and D. Pelenc, J. Opt. Soc. Am. B 0740-3224 10.1364/JOSAB.14.002238 14, 2238 (1997).
14. W. W. Ge, H. J. Zhang, J. Y. Wang, M. H. Jiang, S. Q. Sun, D. G. Ran, H. R. Xia, and R. I. Boughton, J. Appl. Crystallogr. 0021-8898 10.1107/ S0021889806045407 40, 125 (2007).
15. S. J. Zhang, Z. X. Cheng, J. H. Lu, G. M. Li, J. R. Lu, Z. S. Shao, and H. C. Chen, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(99)00283-3 205, 453 (1999).
16. S. J. Zhang, Z. X. Cheng, S. J. Zhang, J. R. Han, L. K. Sun, and H. C. Chen, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(00)00393-6 213, 415 (2000).
17. Y. Qing and B. H. T. Chai, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(98)00947-6 197, 228 (1999).
18. S. J. Zhang, Z. X. Cheng, J. R. Han, G. Y. Zhou, Z. S. Shao, C. Q. Wang, Y. T. Chow, and H. C. Chen, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(99) 00337-1 206, 197 (1999).
19. J. Wang, X. Hu, X. Yin, R. Song, J. Wei, Z. Shao, Y. Liu, M. Jiang, Y. Tian, J. Jiang, and W. Huang, J. Mater. Res. 0884-2914 10.1557/JMR.2001.0093 16, 790 (2001).
20. H. Takeda, H. Sako, H. Shimizu, K. Kodama, M. Nishida, H. Nakao, T. Nishida, S. Okamura, and T. Shikida, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.42.6081 42, 6081 (2003).
21. H. Shimizu, T. Nishida, M. Nishida, H. Takeda, and T. Shiosaki, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.44.7059 44, 7059 (2005).
22. H. Shimizu, H. Takeda, T. Nishida, S. Okamura, T. Shiosaki, and T. Shikida, Proc.-IEEE Ultrason. Symp., 1218 (2004). 0021-4922
23. C. Pawlaczyk, E. Markiewicz, A. Klos, W. Hofman, and A. Pajaczkowska, Phys. Status Solidi A 0031-8965 10.1002/pssa.200521013 203, 2103 (2006).
24. E. Markiewicz, C. Pawlaczyk, A. Klos, W. Hofman, and A. Pajaczkowska, Phys. Status Solidi A 203, 372 (2006). 0031-8957
25. S. J. Zhang, Y. T. Fei, B. H. T. Chai, E. Frantz, D. W. Snyder, X. N. Jiang, and T. R. Shrout, Appl. Phys. Lett. 0003-6951 10.1063/1.2936276 92, 202905 (2008).
26. ANSI/IEEE Standard 176, IEEE Standard on Piezoelectricity, New York, 1987.