메뉴 건너뛰기




Volumn 93, Issue 17, 2008, Pages

Phonon-engineered mobility enhancement in the acoustically mismatched silicon/diamond transistor channels

Author keywords

[No Author keywords available]

Indexed keywords

METALLIC FILMS; PHONONS; ULTRATHIN FILMS;

EID: 55149123185     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3007986     Document Type: Article
Times cited : (34)

References (21)
  • 8
    • 11044229820 scopus 로고    scopus 로고
    • 0003-6951 10.1063/1.1829168, ();, J. Appl. Phys. 0021-8979 10.1063/1.1868876 97, 073710 (2005).
    • W. L. Liu and A. A. Balandin, Appl. Phys. Lett. 0003-6951 10.1063/1.1829168 85, 5230 (2004); W. L. Liu and A. A. Balandin, J. Appl. Phys. 0021-8979 10.1063/1.1868876 97, 073710 (2005).
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 5230
    • Liu, W.L.1    Balandin, A.A.2    Liu, W.L.3    Balandin, A.A.4
  • 10
    • 85168189079 scopus 로고    scopus 로고
    • See for examples of diamond thin films on Si.
    • See www.sp3inc.com for examples of diamond thin films on Si.
  • 11
    • 0001129497 scopus 로고    scopus 로고
    • 0163-1829 10.1103/PhysRevB.58.1544.
    • A. Balandin and K. L. Wang, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58. 1544 58, 1544 (1998).
    • (1998) Phys. Rev. B , vol.58 , pp. 1544
    • Balandin, A.1    Wang, K.L.2
  • 15
    • 85168201018 scopus 로고    scopus 로고
    • See at the Ioffe Physico-Technical Institute, Russia for accurate values of material parameters.
    • See http://www.ioffe.ru/SVA/NSM/Semicond/Si/bandstr.html#Masses at the Ioffe Physico-Technical Institute, Russia for accurate values of material parameters.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.