Real information storage using ferroelectrics with a density of 1 TBIT/INCH2

Ferroelectrics

Volumn 340, Issue 1 PART 1, 2006, Pages 99-105

  Tanaka, K ^a   Hiranaga, Y ^a   Cho, Y ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Bit error rate; Ferroelectric data storage; LiTaO3; Real information; Scanning nonlinear dielectric microscope

Indexed keywords

A-DENSITY; BIT SIZE; DOMAIN SWITCHINGS; FERROELECTRIC DATA STORAGE; FERROELECTRIC MEDIUM; IMMEDIATE ENVIRONMENT; INFORMATION DATA; INFORMATION STORAGE; NANO DOMAIN; NONLINEAR DIELECTRIC; POLARIZATION DIRECTION; PULSE VOLTAGE; REAL INFORMATION; VOLTAGE PULSE;

DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; FERROELECTRIC MATERIALS; FERROELECTRICITY; NANOSTRUCTURED MATERIALS; POLARIZATION;

BIT ERROR RATE;

EID: 55049122855     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190600889080     Document Type: Conference Paper

References (4)

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2. Y. Cho, S. Hashimoto, N. Odagawa, K. Tanaka, and Y. Hiranaga, Appl. Phys. Lett. 87, 232907 (2005).
3. Y. Hiranaga and Y. Cho, Jpn. J. Appl. Phys. 43 (9B), 6632 (2004).
4. Y. Hiranaga, K. Tanaka, and Y. Cho, Jpn. J. Appl. Phys. (in press).