Silicon whisker growth using hot filament reactor with hydrogen as source gas

Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 1, 2008, Pages 4807-4809

  Nagayoshi, Hiroshi ^a   Nordmark, Heidi ^b   Holmestad, Randi ^b   Matsumoto, Nobuo ^c   Nishimura, Suzuka ^c   Terashima, Kazutaka ^c   Walmsley, John C ^d   Ulyashin, Alexander ^e  

^a TOKYO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^c SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

^d SINTEF MATERIALS AND CHEMISTRY   (Norway)

^e INSTITUTE FOR ENERGY TECHNOLOGY   (Norway)

Author keywords

Hot filament; Hydrogen radical; Silicon whisker; Tungsten silicide

Indexed keywords

CRYSTAL WHISKERS; FILAMENTS (LAMP); GASES; HYDROGEN; MICROSCOPIC EXAMINATION; SILICIDES; SILICON; SUBSTRATES; TUNGSTEN;

CHEMICAL VAPOR DEPOSITION REACTORS; HOT FILAMENT; HOT FILAMENTS; HYDROGEN GASES; HYDROGEN RADICAL; HYDROGEN RADICALS; INITIAL STAGES; LONG RESIDENCE TIMES; SCANNING AND TRANSMISSION ELECTRON MICROSCOPIES; SI SUBSTRATES; SILICON SUBSTRATES; SILICON WHISKER; SILICON WHISKERS; SOURCE GASES; TEXTURED SILICON SURFACES; WHISKER GROWTHS;

NONMETALS;

EID: 55049113010     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.4807     Document Type: Article

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