Photoinduced metal-to-insulator transition in a manganite thin film

Physical Review Letters

Volumn 101, Issue 17, 2008, Pages

  Takubo, N ^a,b   Onishi, I ^a   Takubo, K ^b   Mizokawa, T ^b   Miyano, K ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; HYSTERESIS; INSULATION; MAGNETIC MATERIALS; OXIDE MINERALS; THICK FILMS; THIN FILM DEVICES; THIN FILMS;

ELASTIC ENERGIES; HEAT MODES; INSULATING PHASES; INTERMEDIATE STATES; LONG-RANGE; MANGANITE THIN FILMS; METAL TRANSITIONS; MULTICRITICAL POINTS; PHOTOEMISSION SPECTROSCOPIES; PHOTOINDUCED; POTENTIAL BARRIERS; RELATIVE STABILITIES; REVERSE EFFECTS; TRANSPORT MEASUREMENTS; WIDE HYSTERESISES;

METAL INSULATOR TRANSITION;

EID: 55049090859     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.101.177403     Document Type: Article

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