Unidirectional formation of tetrahedral voids in irradiated silicon carbide

Applied Physics Letters

Volumn 93, Issue 16, 2008, Pages

  Kondo, S ^a   Katoh, Y ^a   Snead, L L ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING MATERIALS; IRRADIATION; NEUTRON IRRADIATION; SILICON CARBIDE; SURFACE CHEMISTRY; SURFACE TENSION;

OCTAHEDRAL VOIDS; SI(111); SURFACE AREAS; SURFACE ENERGIES; TERMINATED SURFACES; VOLUME RATIOS;

SILICON;

EID: 54949118713     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3005650     Document Type: Article

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