Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure

Applied Physics Letters

Volumn 93, Issue 16, 2008, Pages

  Tiercelin, Nicolas ^a   Talbi, A ^a   Preobrazhensky, V ^a   Pernod, P ^a   Mortet, V ^b   Haenen, K ^b   Soltani, A ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b HASSELT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUATORS; ALUMINA; ALUMINUM COMPOUNDS; MAGNETIC FIELD EFFECTS; MAGNETOELECTRIC EFFECTS; MAGNETOSTRICTIVE DEVICES; NITRIDES; PIEZOELECTRICITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPIN DYNAMICS; THICK FILMS;

ALUMINUM NITRIDE THIN FILMS; ALUMINUM NITRIDES; CLAMPED BEAMS; GIANT MAGNETOSTRICTIVE; LONGITUDINAL; MAGNETIC INSTABILITIES; MAGNETOSTRICTIVE LAYERS; ME COEFFICIENTS; NANOSTRUCTURED LAYERS; NONLINEAR; NONLINEAR EXCITATIONS; PIEZOELECTRIC; PIEZOELECTRIC LAYERS; SILICON SUBSTRATES; SPIN REORIENTATIONS;

COMPOSITE MICROMECHANICS;

EID: 54949104614     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3001601     Document Type: Article

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