High-power modified uni-traveling carrier photodiode with > 50 dBm third order intercept point

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2008, Pages 499-502

  Beling, Andreas ^a   Pan, Huapu ^a   Chen, Hao ^a   Campbell, Joe C ^a  

^a University of Virginia   (United States)

Author keywords

InGaAs; Linearity; Photodiode (PD); Third order intermodulation distortion

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; CIVIL AVIATION; DISTORTION (WAVES); HIGH ELECTRON MOBILITY TRANSISTORS; INTERMODULATION; INTERMODULATION DISTORTION; INTERMODULATION MEASUREMENT; MICROWAVES; MODULATION; PHOTODIODES; SUPERCONDUCTING DEVICES; SUPERCONDUCTING FILMS; TERNARY SYSTEMS; TRANSCEIVERS;

3DB BANDWIDTHS; EQUIVALENT CIRCUIT MODELS; FREQUENCY CHARACTERISTICS; HIGH POWERS; INGAAS; INGAAS/INP; INTERCEPT POINTS; JUNCTION CAPACITANCES; LINEARITY; MODULATION FREQUENCIES; SET-UPS; THIRD ORDER INTERCEPT POINTS; THIRD ORDERS; THIRD-ORDER INTERMODULATION DISTORTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 54949085368     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4633212     Document Type: Conference Paper

References (7)

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