Aluminum oxide film as gate dielectric for organic FETs: Anodization and characterization

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 3, 2008, Pages 626-632

  Dang, X D ^a   Plieth, W ^a   Richter, S ^a   Plotner M ^a   Fischer, W J ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINIUM OXIDES; ALUMINUM OXIDE FILMS; ANODIC ALUMINIUM OXIDES; ANODIZATION; BARRIER LAYERS; CAPACITANCE VALUES; CHEMICAL IMPEDANCE SPECTROSCOPIES; IMPEDANCE DATUM; LAYER MODELS; ORGANIC FETS; POROUS LAYERS; PREPARATION CONDITIONS; SEM MICROGRAPHS; SILICON DIOXIDE FILMS;

ALUMINA; ALUMINUM; CHEMICAL PROPERTIES; DIELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; FILM PREPARATION; GATE DIELECTRICS; GATES (TRANSISTOR); LIGHT METALS; OXIDES; SILICA;

OXIDE FILMS;

EID: 54849417663     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723453     Document Type: Article

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