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Volumn 28, Issue 5, 2008, Pages 59-78

Friction Modeling in Linear Chemical-Mechanical Planarization

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EID: 54749111098     PISSN: 1066033X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCS.2008.927333     Document Type: Article
Times cited : (3)

References (27)
  • 1
    • 33845546338 scopus 로고    scopus 로고
    • Control of lithography in semiconductor manufacturing
    • V. Martinez and T. Edgar, “Control of lithography in semiconductor manufacturing,” IEEE Control Syst. Mag., vol. 26, no. 6, pp. 46–55, 2006.
    • (2006) IEEE Control Syst. Mag. , vol.26 , Issue.6 , pp. 46-55
    • Martinez, V.1    Edgar, T.2
  • 2
    • 30544454797 scopus 로고    scopus 로고
    • Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication
    • Berlin, Germany: Springer-Verlag
    • J. Luo and D.A. Dornfeld, Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication. Berlin, Germany: Springer-Verlag, 2004.
    • (2004)
    • Luo, J.1    Dornfeld, D.A.2
  • 3
    • 0032288356 scopus 로고    scopus 로고
    • Monitoring and control of semiconductor manufacturing processes
    • S. Limanond, J. Si, and K. Tsakalis, “Monitoring and control of semiconductor manufacturing processes,” IEEE Control Syst. Mag., vol. 18, no. 6, pp. 46-58,1998.
    • (1998) IEEE Control Syst. Mag. , vol.18 , Issue.6 , pp. 46-58
    • Limanond, S.1    Si, J.2    Tsakalis, K.3
  • 4
    • 0034325420 scopus 로고    scopus 로고
    • Automatic control in microelectronics manufacturing: Practices, challenges, and possibilites
    • T. Edgar, S. Butler, W. Campbell, C. Pfeiffer, C. Bode, S. Hwang, K. Balakrishnan, and J. Hahn, “Automatic control in microelectronics manufacturing: Practices, challenges, and possibilites,” Automatica, vol. 36, no. 11, pp. 1567–1603, 2000.
    • (2000) Automatica , vol.36 , Issue.11 , pp. 1567-1603
    • Edgar, T.1    Butler, S.2    Campbell, W.3    Pfeiffer, C.4    Bode, C.5    Hwang, S.6    Balakrishnan, K.7    Hahn, J.8
  • 5
    • 85056978251 scopus 로고    scopus 로고
    • Run-to-Run Control in Semiconductor Manufacturing
    • Boca Raton, FL: CRC
    • J. Moyne, E. del Castillo, and A. Hurwitz, Eds., Run-to-Run Control in Semiconductor Manufacturing. Boca Raton, FL: CRC, 2001.
    • (2001)
    • Moyne, J.1    Castillo, E.2    Eds, A.H.3
  • 6
    • 0344896835 scopus 로고    scopus 로고
    • Neural network based uniformity profile control of linear chemical-mechanical planarization
    • J. Yi, Y. Sheng, and C. Xu, “Neural network based uniformity profile control of linear chemical-mechanical planarization,” IEEE Trans. Semiconduct. Manufact., vol. 16, no. 4, pp. 609–620, 2003.
    • (2003) IEEE Trans. Semiconduct. Manufact. , vol.16 , Issue.4 , pp. 609-620
    • Yi, J.1    Sheng, Y.2    Xu, C.3
  • 7
    • 0001611894 scopus 로고
    • The theory and design of plate glass polishing machines, ” J
    • F. Preston, “The theory and design of plate glass polishing machines,” J. Soc. Glass Tech., vol. 11, pp. 214-256,1927.
    • (1927) Soc. Glass Tech. , vol.11 , pp. 214-256
    • Preston, F.1
  • 8
    • 0037147070 scopus 로고    scopus 로고
    • Friction and thermal phenomena in chemical mechanical polishing
    • –131
    • H. Kim, H. Kim, H. Jeong, E. Lee, and Y. Shin, “Friction and thermal phenomena in chemical mechanical polishing,” J. Mat. Proc. Tech., vol. 130–131, pp. 334–338, 2002.
    • (2002) J. Mat. Proc. Tech. , vol.130 , pp. 334-338
    • Kim, H.1    Kim, H.2    Jeong, H.3    Lee, E.4    Shin, Y.5
  • 9
    • 1642577079 scopus 로고    scopus 로고
    • Tribology and removal rate characteristics of abrasive-free slurries for copper CMP applications
    • D. DeNardis, J. Sorooshian, M. Habiro, C. Rogers, and A. Philipossian, “Tribology and removal rate characteristics of abrasive-free slurries for copper CMP applications,” Jpn. J. Appl. Phys., vol. 42, no. 11, pp. 6809–6814, 2003.
    • (2003) Jpn. J. Appl. Phys. , vol.42 , Issue.11 , pp. 6809-6814
    • DeNardis, D.1    Sorooshian, J.2    Habiro, M.3    Rogers, C.4    Philipossian, A.5
  • 10
    • 0347651412 scopus 로고    scopus 로고
    • Effects of mechanical parameters on CMP characteristics analyzed by two-dimensional frictional-force measurement, ” J
    • Y. Homma, K. Fukushima, S. Kondo, and N. Sakuma, “Effects of mechanical parameters on CMP characteristics analyzed by two-dimensional frictional-force measurement,” J. Electrochem. Soc., vol. 150, no. 12, pp. G751-G757, 2003.
    • (2003) Electrochem. Soc. , vol.150 , Issue.12 , pp. G751-G757
    • Homma, Y.1    Fukushima, K.2    Kondo, S.3    Sakuma, N.4
  • 11
    • 33646401801 scopus 로고    scopus 로고
    • Dynamical mechanism of chemical mechanical polishing analyzed to correct Preston's empirical model, ” J
    • Y. Homma, “Dynamical mechanism of chemical mechanical polishing analyzed to correct Preston's empirical model,” J. Electrochem. Soc., vol. 153, no. 6, pp. G587-G590, 2006.
    • (2006) Electrochem. Soc. , vol.153 , Issue.6 , pp. G587-G590
    • Homma, Y.1
  • 12
    • 0035737991 scopus 로고    scopus 로고
    • Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process, ” J
    • A. Sikder, F. Giglio, J. Wood, A. Kumar, and M. Anthony, “Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process,” J. Electr. Mater., vol. 30, no. 12, pp. 1520-1526,2001.
    • (2001) Electr. Mater. , vol.30 , Issue.12 , pp. 1520-1526
    • Sikder, A.1    Giglio, F.2    Wood, J.3    Kumar, A.4    Anthony, M.5
  • 13
    • 33845239182 scopus 로고    scopus 로고
    • A method for measuring frictional forces and shaft vibrations during chemical mechanical polishing
    • P. Carter and T. Werts, “A method for measuring frictional forces and shaft vibrations during chemical mechanical polishing,” J. Electrochem. Soc., vol. 154, no. 1, pp. H60-H66, 2007.
    • (2007) J. Electrochem. Soc. , vol.154 , Issue.1 , pp. H60-H66
    • Carter, P.1    Werts, T.2
  • 14
    • 25144450473 scopus 로고    scopus 로고
    • On the wafer/pad friction of chemical-mechanical planarization (CMP) processes, Part I: modeling and analysis
    • J. Yi, “On the wafer/pad friction of chemical-mechanical planarization (CMP) processes, Part I: modeling and analysis,” IEEE Trans. Semiconduct. Manufact., vol. 18, no. 3, pp. 359–370, 2005.
    • (2005) IEEE Trans. Semiconduct. Manufact. , vol.18 , Issue.3 , pp. 359-370
    • Yi, J.1
  • 15
    • 25144495113 scopus 로고    scopus 로고
    • On the wafer/pad friction of chemical-mechanical planarization (CMP) processes, Part II: Experiments and applications
    • J. Yi, “On the wafer/pad friction of chemical-mechanical planarization (CMP) processes, Part II: Experiments and applications,” IEEE Trans. Semiconduct. Manufact., vol. 18, no. 3, pp. 371–383, 2005.
    • (2005) IEEE Trans. Semiconduct. Manufact. , vol.18 , Issue.3 , pp. 371-383
    • Yi, J.1
  • 16
    • 0035366026 scopus 로고    scopus 로고
    • Empirical-based modeling for control of CMP removal uniformity
    • A. Jensen P. Renteln, S. Jew, C. Raeder, and P. Cheung, “Empirical-based modeling for control of CMP removal uniformity,” Solid State Technol., vol. 44, no. 6, pp. 101–106, 2001.
    • (2001) Solid State Technol. , vol.44 , Issue.6 , pp. 101-106
    • Jensen, A.1    Renteln, P.2    Jew, S.3    Raeder, C.4    Cheung, P.5
  • 17
    • 33645538700 scopus 로고    scopus 로고
    • Characterizing CMP pad conditioning using diamond abrasives
    • T. Dyer and J. Schlueter, “Characterizing CMP pad conditioning using diamond abrasives,” Micro, vol. 20, pp. 47–54, 2002.
    • (2002) Micro , vol.20 , pp. 47-54
    • Dyer, T.1    Schlueter, J.2
  • 18
    • 0035338991 scopus 로고    scopus 로고
    • Material removal mechanism in chemical mechanical polishing: theory and modeling
    • J. Luo and D. Dornfeld, “Material removal mechanism in chemical mechanical polishing: theory and modeling,” IEEE Trans. Semiconduct. Manufact., vol. 14, no. 2, pp. 112–133, 2001.
    • (2001) IEEE Trans. Semiconduct. Manufact. , vol.14 , Issue.2 , pp. 112-133
    • Luo, J.1    Dornfeld, D.2
  • 19
    • 0032661328 scopus 로고    scopus 로고
    • Contact mechanics and lubrication hydrodynamics of chemical mechanical polishing
    • J. Tichy, J. Levert, L. Shan, and S. Danyluk, “Contact mechanics and lubrication hydrodynamics of chemical mechanical polishing,” J. Electrochem. Soc., vol. 146, no. 4, pp. 1523-1528,1999.
    • (1999) J. Electrochem. Soc. , vol.146 , Issue.4 , pp. 1523-1528
    • Tichy, J.1    Levert, J.2    Shan, L.3    Danyluk, S.4
  • 20
    • 0029270672 scopus 로고
    • A new model for control of systems with friction
    • de Wit, H. Olsson, K. Astrom, and P. Lischinsky
    • C. Canudas de Wit, H. Olsson, K. Astrom, and P. Lischinsky, “A new model for control of systems with friction,” IEEE Trans. Automat. Contr., vol. 40, no. 3, pp. 419-425,1995.
    • (1995) IEEE Trans. Automat. Contr. , vol.40 , Issue.3 , pp. 419-425
    • Canudas, C.1
  • 21
    • 0037352952 scopus 로고    scopus 로고
    • Dynamic friction models for road/tire longitudinal interaction
    • de Wit, P. Tsiotras, E. Velenis, M. Basset, and G. Gissinger
    • C. Canudas de Wit, P. Tsiotras, E. Velenis, M. Basset, and G. Gissinger, “Dynamic friction models for road/tire longitudinal interaction,” Veh. Syst. Dyn., vol. 39, no. 3, pp. 189–226, 2003.
    • (2003) Veh. Syst. Dyn. , vol.39 , Issue.3 , pp. 189-226
    • Canudas, C.1
  • 22
    • 0037304004 scopus 로고    scopus 로고
    • Tire/road friction estimation and emergency braking control using a dynamic friction model
    • J. Yi, L. Alvarez, X. Claeys, and R. Horowitz, “Tire/road friction estimation and emergency braking control using a dynamic friction model,” Veh. Syst. Dyn., vol. 39, no. 2, pp. 81–97, 2003.
    • (2003) Veh. Syst. Dyn. , vol.39 , Issue.2 , pp. 81-97
    • Yi, J.1    Alvarez, L.2    Claeys, X.3    Horowitz, R.4
  • 23
    • 10944256665 scopus 로고    scopus 로고
    • A 3D brush-type dynamic tire friction model
    • J. Deur, J. Asgari, and D. Hrovat, “A 3D brush-type dynamic tire friction model,” Veh. Syst. Dyn., vol. 42, no. 3, pp. 133–173, 2004.
    • (2004) Veh. Syst. Dyn. , vol.42 , Issue.3 , pp. 133-173
    • Deur, J.1    Asgari, J.2    Hrovat, D.3
  • 24
    • 0005980582 scopus 로고    scopus 로고
    • A CMP model combining density and time dependencies
    • Santa Clara, CA
    • T. Smith, S. Fang, D. Boning, G. Shinm, and J. Stefani, “A CMP model combining density and time dependencies,” in Proc. CMP-MIC Conf, Santa Clara, CA, 1999, pp. 97–104.
    • (1999) Proc. CMP-MIC Conf , pp. 97-104
    • Smith, T.1    Fang, S.2    Boning, D.3    Shinm, G.4    Stefani, J.5
  • 25
    • 0036532411 scopus 로고    scopus 로고
    • Correlation analysis between pattern and non-pattern wafer for characterization of shallow trench isolation chemical-mechanical polishing (STI-CMP) process
    • S. Kim and Y. Seo, “Correlation analysis between pattern and non-pattern wafer for characterization of shallow trench isolation chemical-mechanical polishing (STI-CMP) process,” Microelectron. Eng., vol. 60, pp. 357–364, 2002.
    • (2002) Microelectron. Eng. , vol.60 , pp. 357-364
    • Kim, S.1    Seo, Y.2
  • 26
    • 85008017437 scopus 로고    scopus 로고
    • System and method for in situ characterization and maintenance of polishing pad smoothness in chemical-mechanical polishing
    • U.S. Patent 153, 182 Dec.
    • T. Travis, J. Yi, and P. Norton, “System and method for in situ characterization and maintenance of polishing pad smoothness in chemical-mechanical polishing,” U.S. Patent 7,153,182, Dec. 2006.
    • (2006) , vol.7
    • Travis, T.1    Yi, J.2    Norton, P.3
  • 27
    • 32044459049 scopus 로고    scopus 로고
    • Temperature effects of pad conditioning process on oxide CMP: Polishing pad, slurry characteristics, and surface reactions
    • N.-H. Kim, Y.-J. Seo, and W.-S. Lee, “Temperature effects of pad conditioning process on oxide CMP: Polishing pad, slurry characteristics, and surface reactions,” Microelectron. Eng., vol. 83, pp. 362–370, 2006.
    • (2006) Microelectron. Eng. , vol.83 , pp. 362-370
    • Kim, N.-H.1    Seo, Y.-J.2    Lee, W.-S.3


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