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The transient time constant τd is linked to resistivity ρ and the relative dielectric constant εr of BTO thin film by τd =ρ εr ε0, where the permittivity of free space ε0 =8.85× 10-12 C2 N-1 m-2, εr =350, and ρ ∼5× 105 m based on our previous measurement. We have τd ∼1.5 ms, which is in consistent with measured relaxation time of 1.5 ms for the 20 V pulse point around which the transition was observed (see Fig.).
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The transient time constant τd is linked to resistivity ρ and the relative dielectric constant εr of BTO thin film by τd =ρ εr ε0, where the permittivity of free space ε0 =8.85× 10-12 C2 N-1 m-2, εr =350, and ρ ∼5× 105 m based on our previous measurement. We have τd ∼1.5 ms, which is in consistent with measured relaxation time of 1.5 ms for the 20 V pulse point around which the transition was observed (see Fig.).
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