Estimation of the silicon concentration by an optical way in polycrystalline CVD diamond

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 11, 2004, Pages 2503-2508

  Rzepka, E ^a   Laroche, J M ^a   Teukam, Z ^a   Franc, G ^a   Jomard, F ^a   Ballutaud, D ^a   Galtier, P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; DIAMOND SUBSTRATES; ROOM TEMPERATURE;

CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICON WAFERS; ULTRAVIOLET RADIATION;

DIAMOND FILMS;

EID: 5444242002     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405169     Document Type: Conference Paper

References (10)

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