Modelling the self-heating of power devices

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 1992-May, Issue , 1992, Pages 124-129

  Kraus, R ^a   Turkes P ^b   Mattausch, H J ^b  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; HEATING;

CIRCUIT SIMULATORS; ELECTRICAL DEVICES; POWER DEVICES; SELF-HEATING; SELF-HEATING EFFECT; THERMAL BEHAVIORS; THERMAL CHARACTERISTICS;

POWER MOSFET;

EID: 5444241361     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.1992.991248     Document Type: Conference Paper

References (5)

1. P. Türkes, H. J. Mattausch, "A new generation of circuit simulators makes power MOSFET models simple", Symposium on Materials and Devices for Power Electronics, pp. 276-279, Sept. 1991
2. R. Kraus, K. Hoffmann, P. Tiirkes, "Reverse Recovery Model of Power Diodes", Symposium on Materials and Devices for Power Electronics, pp. 343-345, sept. 1991
3. Analogy, SABER manual, Beaverton OR, 89
4. D. L. Blackburn, "Failure Mechanisms and nondestructive Testing of Power Bipolar and MOS gated Transistors", Symposium on Materials and Devices for Power Electronics, pp. 252-257, Sept. 1991
5. S. M. Sze, "Physics of Semiconductor Devices", J. Wiley, 1969