-
2
-
-
0005115089
-
A versatile 3.3 V/2.5 V/1.8 V CMOS I/O driver built in a 0.2 /spl mu/m 3.5 nm Tox 1.8 V CMOS technology
-
H. Sanchez, et al., "A versatile 3.3 V/2.5 V/1.8 V CMOS I/O driver built in a 0.2 /spl mu/m 3.5 nm Tox 1.8 V CMOS technology," in Digest of ISSCC, 1999, pp. 276-277.
-
(1999)
Digest of ISSCC
, pp. 276-277
-
-
Sanchez, H.1
-
3
-
-
4344656295
-
3.3V-5V compatible I/O circuit without thick gate oxide
-
M. Takahash, et al., "3.3V-5V compatible I/O circuit without thick gate oxide," Proc. of IEEE Custom Integrated Circuits Conf., 1992, pp. 23.3.1-23.3.4.
-
(1992)
Proc. of IEEE Custom Integrated Circuits Conf.
, pp. 23.3.1-23.3.4
-
-
Takahash, M.1
-
4
-
-
0030654032
-
Accelerated gate-oxide breakdown in mixed-voltage I/O circuits
-
T. Furukawa, et al., "Accelerated gate-oxide breakdown in mixed-voltage I/O circuits," Proc. of IEEE Int. Reliability Physics Symp., 1997, pp. 169-173.
-
(1997)
Proc. of IEEE Int. Reliability Physics Symp.
, pp. 169-173
-
-
Furukawa, T.1
-
6
-
-
0033221989
-
High -voltage-tolerant I/O buffers with low-voltage CMOS process
-
G. Singh and R. Salem, "High -voltage-tolerant I/O buffers with low-voltage CMOS process," IEEE Journal of Solid-State Circuits, vol. 34, pp. 1512-1525, 1999.
-
(1999)
IEEE Journal of Solid-State Circuits
, vol.34
, pp. 1512-1525
-
-
Singh, G.1
Salem, R.2
-
7
-
-
0033279088
-
Stacked PMOS clamps for high voltage power supply protection
-
T. Maloney and W. Kan, "Stacked PMOS clamps for high voltage power supply protection," Proc. of EOS/ESD Symp., 1999, pp. 70-77.
-
(1999)
Proc. of EOS/ESD Symp.
, pp. 70-77
-
-
Maloney, T.1
Kan, W.2
-
8
-
-
0032316866
-
ESD protection for mixed-voltage I/O using NMOS transistors stacked in a cascode configuration
-
W. Anderson and D. Krakauer, "ESD protection for mixed-voltage I/O using NMOS transistors stacked in a cascode configuration," Proc. of EOS/ESD Symp., 1998, pp. 54-71.
-
(1998)
Proc. of EOS/ESD Symp.
, pp. 54-71
-
-
Anderson, W.1
Krakauer, D.2
-
9
-
-
0034546887
-
Engineering the cascoded NMOS output buffer for maximum Vt1
-
J. Miller, et al., "Engineering the cascoded NMOS output buffer for maximum Vt1," Proc. of EOS/ESD Symp., 2000, pp. 308-317.
-
(2000)
Proc. of EOS/ESD Symp.
, pp. 308-317
-
-
Miller, J.1
-
10
-
-
0029489170
-
Substrate triggering and salicide effects on ESD performance and protection circuit design in deep submicron CMOS processes
-
A. Amerasekera, et al., "Substrate triggering and salicide effects on ESD performance and protection circuit design in deep submicron CMOS processes," Tech. Dig. of IEDM, pp. 547-550, 1995.
-
(1995)
Tech. Dig. of IEDM
, pp. 547-550
-
-
Amerasekera, A.1
-
11
-
-
0031641250
-
Novel input ESD protection circuit with substrate-triggering technique in a 0.25-μm shallow-trench-isolation CMOS technology
-
M.-D. Ker, et al., "Novel input ESD protection circuit with substrate-triggering technique in a 0.25-μm shallow-trench-isolation CMOS technology," Proc. of IEEE Int. Symp. on Circuits and Systems, vol. 2, 1998, pp. 212-215.
-
(1998)
Proc. of IEEE Int. Symp. on Circuits and Systems
, vol.2
, pp. 212-215
-
-
Ker, M.-D.1
-
12
-
-
0034545734
-
Substrate pump NMOS for ESD protection applications
-
C. Duvvury, et al., "Substrate pump NMOS for ESD protection applications," Proc. of EOS/ESD Symp., 2000, pp. 7-17.
-
(2000)
Proc. of EOS/ESD Symp.
, pp. 7-17
-
-
Duvvury, C.1
-
13
-
-
5444227604
-
Substrate resistance modeling and circuit-level simulation of parasitic device coupling effects for CMOS I/O circuits under ESD stress
-
T. Li, et al., "Substrate resistance modeling and circuit-level simulation of parasitic device coupling effects for CMOS I/O circuits under ESD stress," Proc. of EOS/ESD Symp., 1998, pp. 281-289.
-
(1998)
Proc. of EOS/ESD Symp.
, pp. 281-289
-
-
Li, T.1
-
14
-
-
0033732596
-
Process and layout dependent substrate resistance modeling for deep sub-micron ESD protection devices
-
X. Zhang, et al., "Process and layout dependent substrate resistance modeling for deep sub-micron ESD protection devices," Proc. of IEEE Int. Reliability Physics Symp., 2000, pp. 295-303.
-
(2000)
Proc. of IEEE Int. Reliability Physics Symp.
, pp. 295-303
-
-
Zhang, X.1
|