Theory and design of field-effect carbon nanotube transistors

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 167-170

  Pennington, G ^a   Goldsman, N ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Carbon nanotubes; CNTFETs; Educational institutions; Effective mass; Electrons; Energy states; FETs; Photonic band gap; Resonant tunneling devices; Semiconductivity

Indexed keywords

CARBON NANOTUBES; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRONS; ENERGY GAP; FIELD EFFECT TRANSISTORS; NANOTUBES; PHOTONIC BAND GAP; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; RESONANT TUNNELING; SEMICONDUCTOR DEVICES; YARN;

CNTFETS; EDUCATIONAL INSTITUTIONS; EFFECTIVE MASS; FETS; RESONANT TUNNELING DEVICE; SEMICONDUCTIVITY;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

EID: 5444224569     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233663     Document Type: Conference Paper

References (5)

1. Bachtold et al.,"Logic Circuits with Carbon nanotube Transistors," Science, vol. 294, pp.1317-1320, 2001.
2. W.R. Frensley, "Wigner-function model of a resonant-tunneling semiconductor device," Phys. Rev. B, vol. 36, No. 3, 1987.
3. R. Saito, M.S Dresselhaus, and G. Dresselhaus, Physical properties of carbon nanotubes, Imperial College Press, London, 1998.
4. G. Pennington and N. Goldsman, "Monte Carlo Study of Electron Transport in a Carbon Nanotube," IEICE TRANS. Electron., vol. E86-C, pp. 372-378, 2003.
5. G. Pennington and N. Goldsman, "Semiclassical transport and phonon scattering of electrons in semiconducting Carbon nanotubes," Phys. Rev. B, vol. 86, No. 3, 2003.