Incorporation of arsenic in diamond grown by chemical vapor deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 9, 2008, Pages 2207-2210

  Frangieh, G ^a   Pinault, M A ^a   Barjon, J ^a   Jomard, F ^a   Chevallier, J ^a  

^a LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC INCORPORATIONS; CATHODOLUMINESCENCE SPECTROSCOPIES; CHEMICAL VAPOUR DEPOSITIONS; CONTINUOUS; DEEP DONORS; DIAMOND LAYERS; DOPING; GAS FLOWS; GASEOUS PHASES; GROWTH CONDITIONS; HOMOEPITAXIAL DIAMOND LAYERS; IONIZATION ENERGIES; MICROWAVE PLASMAS; NOMARSKI OPTICAL MICROSCOPIES; PHOSPHORUS DOPING; SECONDARY IONS; SEQUENTIAL GROWTHS; TRIMETHYLARSENIC;

ARSENIC; DIAMOND FILMS; DIAMONDS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; INJECTION (OIL WELLS); IONIZATION; IONIZATION OF GASES; KETONES; MASS SPECTROMETRY; MICROWAVES; OPTICAL MICROSCOPY; PHOSPHORUS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SPECTRUM ANALYSIS;

NONMETALS;

EID: 54349101258     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200879726     Document Type: Conference Paper

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