Performance of organic field-effect transistors with poly(3-hexylthiophene) as the semiconductor layer and poly(4-vinylphenol) thin film untreated and treated by hexamethyldisilazane as the gate insulator

Japanese Journal of Applied Physics

Volumn 47, Issue 1 PART 2, 2008, Pages 496-500

  Mototani, Suguru ^a   Ochiai, Shizuyasu ^a   Wang, Xin ^a   Kojima, Kenzo ^a   Ohashi, Asao ^a   Mizutani, Teruyoshi ^a  

^a AICHI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Heat crosslinking; HMDS; Mobility; Organic field effect transistor; P3HT; PVP; Surface modification

Indexed keywords

ABS RESINS; CARRIER MOBILITY; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); POLYMER FILMS; POLYMERS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACE ROUGHNESS; THICK FILMS; THIN FILMS;

HMDS; MOBILITY; ORGANIC FIELD-EFFECT TRANSISTOR; P3HT; PVP; SURFACE MODIFICATION;

TRANSISTORS;

EID: 54249149492     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.496     Document Type: Article

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