Characterization of palladium-related defects in silicon

Hyperfine Interactions

Volumn 177, Issue 1-3, 2007, Pages 33-37

  Dogra, R ^a   Byrne, A P ^b   Brett, D A ^b   Ridgway, M C ^b  

^a BEANT COLLEGE OF ENGINEERING AND TECHNOLOGY   (India)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Defects; Electric field gradient; Palladium; Perturbed angular correlation; Silicon

Indexed keywords

EID: 54249145571     PISSN: 03043843     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10751-008-9618-8     Document Type: Article

References (8)

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3. H.H. Woodbury G.W. Ludwig 1962 Spin resonance of Pd and Pt in Silicon Phys. Rev. B 126 466
4. G.D. Watkins 1983 Deep levels in semiconductors Physica. B 117-118 9
5. C.A.J. Ammerlaan A.B. van Oosten 1989 Electronic structure of platinum in silicon Physica Scripta. T25 342
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7. J. Vicente L. Enríquez E. Rubio L. Bailón J. Barbolla 1993 In-diffusion and annealing kinetics of palladium in silicon J. Electrochem. Soc. 140 868
8. J. Wu J. Zhou D. Zhang 1990 Theoretical study of the PD-B complex in silicon J. Appl. Phys. 67 7139