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Volumn 1, Issue 1, 2008, Pages 143-148

Helium ion microscope invasiveness study and novel imaging analysis for semiconductor applications

Author keywords

Cascade; Damage; Dislocation; FIB; GFIS; Helium ion; Helium microscope

Indexed keywords


EID: 54149106916     PISSN: 18753884     EISSN: 18753892     Source Type: Conference Proceeding    
DOI: 10.1016/j.phpro.2008.07.089     Document Type: Conference Paper
Times cited : (13)

References (10)
  • 5
    • 54149090950 scopus 로고    scopus 로고
    • B.W. Ward, John A. Notte, N.P. Economou, J. Vac. Sci. Tech. B -EIPBN Proceedings, (2006).
    • B.W. Ward, John A. Notte, N.P. Economou, J. Vac. Sci. Tech. B -EIPBN Proceedings, (2006).
  • 6
    • 49649115000 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors
    • International Technology Roadmap for Semiconductors, Metrology Section (2005).
    • (2005) Metrology Section
  • 8
    • 54149089950 scopus 로고    scopus 로고
    • A.Lungstein, et al, J. Vac. Sci. Tech. B, (Jun/Jul 2003).
    • A.Lungstein, et al, J. Vac. Sci. Tech. B, (Jun/Jul 2003).
  • 10
    • 33846638339 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors
    • International Technology Roadmap for Semiconductors, Lithography Section (2005).
    • (2005) Lithography Section


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.