Nano-scale analysis using synchrotron-radiation: Applications in the semiconductor industry

Current Nanoscience

Volumn 4, Issue 3, 2008, Pages 256-266

  Zschech, Ehrenfried ^a   Geisler, Holm ^a   Rinderknecht, Jochen ^a   Schneider, Gerd ^b   Spolenak, Ralph ^c   Schmeisser, Dieter ^d  

^a IBM MICROELECTRONICS   (United States)

^b HAHN MEITNER INSTITUT   (Germany)

^c ETH ZURICH   (Switzerland)

^d BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Nano Scale; Semiconductor Industry; Surface analysis techniques; Synchrotron Radiation; Thin film; X ray computed tomography (XCT) systems; X ray photoelectron spectroscopy (XPS)

Indexed keywords

APPLICATIONS; COMPUTERIZED TOMOGRAPHY; CONTROL THEORY; DIAGNOSTIC RADIOGRAPHY; DIELECTRIC MATERIALS; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC WAVES; EMISSION SPECTROSCOPY; FAILURE ANALYSIS; INDUSTRIAL APPLICATIONS; LABORATORIES; LIGHT; MEDICAL IMAGING; MICROSCOPIC EXAMINATION; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; PROCESS CONTROL; PROCESS ENGINEERING; PROCESS MONITORING; QUALITY ASSURANCE; QUANTUM OPTICS; SAFETY FACTOR; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SOLIDS; SURFACE CHEMISTRY; SYNCHROTRON RADIATION; SYNCHROTRONS; THICK FILMS; THIN FILM DEVICES; THIN FILMS; TOMOGRAPHY; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY OPTICS; X RAY SCATTERING; X RAYS;

NANO-SCALE; SEMICONDUCTOR INDUSTRY; SURFACE ANALYSIS TECHNIQUES; THIN FILM; X-RAY COMPUTED TOMOGRAPHY (XCT) SYSTEMS; X-RAY PHOTOELECTRON SPECTROSCOPY (XPS);

X RAY PHOTOELECTRON SPECTROSCOPY;

NANOMATERIAL; ORGANOSILICON DERIVATIVE; SILICATE; SILICON DERIVATIVE; SILICON OXYNITRIDE; UNCLASSIFIED DRUG;

COMPUTER ASSISTED TOMOGRAPHY; CONTROLLED STUDY; ELECTRON MICROSCOPY; MICROSCOPY; PHOTOELECTRON EMISSION MICROSCOPY; PRIORITY JOURNAL; PROCESS DEVELOPMENT; PROCESS MONITORING; RADIATION SCATTERING; REVIEW; ROENTGEN SPECTROSCOPY; ROOM TEMPERATURE; SEMICONDUCTOR; SURFACE PROPERTY; SYNCHROTRON RADIATION; TEMPERATURE DEPENDENCE; TEMPERATURE STRESS; TOTAL REFLECTION X RAY FLUORESCENCE; X RAY ABSORPTION SPECTROSCOPY; X RAY COMPUTER ASSISTED TOMOGRAPHY; X RAY DIFFRACTION; X RAY FLUORESCENCE; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 53649093100     PISSN: 15734137     EISSN: None     Source Type: Journal    
DOI: 10.2174/157341308785161073     Document Type: Review

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