Point defect structure in CdTe and ZnTe thin films

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

  Kosyak, V V ^a   Kolesnyk, M M ^a   Opanasyuk, A S ^a  

^a SUMY STATE UNIVERSITY   (Ukraine)

Author keywords

CdTe; Dark voltage current characteristic; Injection spectroscopy; Point defects; Quasi chemical formalism; Quasi close volume; Thin films; ZnTe

Indexed keywords

CDTE; DARK VOLTAGE-CURRENT CHARACTERISTIC; INJECTION SPECTROSCOPY; QUASI-CHEMICAL FORMALISM; QUASI-CLOSE VOLUME; ZNTE;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; DARK CURRENTS; DEFECT STRUCTURES; MICROSCOPIC EXAMINATION; POINT DEFECTS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING ZINC COMPOUNDS; THICK FILMS; THIN FILMS; ZINC COMPOUNDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 53649091894     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9562-4     Document Type: Article

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