A molecular model for an excess electron in silicon: Electron addition to hexatrimethylsilyl disilane, a derivative with eight σ-bonded silicon atoms

Journal of Physics Condensed Matter

Volumn 8, Issue 42, 1996, Pages 7981-7989

  Mishra, S P ^a   Symons, M C R ^b  

^a BANARAS HINDU UNIVERSITY   (India)

^b DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5344236721     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/8/42/016     Document Type: Article

References (14)

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