Measurement of the steady-state minority carrier diffusion length in a HgCdTe photodiode

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 SUPPL. B, 1996, Pages

  Jung, Han ^a,b   Lee, Hee Chul ^a   Kim, Choong Ki ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

HgCdTe; Optical shadow mask; Steady state diffusion length

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; INFRARED RADIATION; MASKS; MERCURY COMPOUNDS; PROBES; REFRIGERATORS; VACUUM APPLICATIONS;

ELECTRON BEAM INDUCED CURRENT TECHNIQUE; MERCURY CADMIUM TELLURIDE; MICROPROBES; OPTICAL SHADOW MASK; PHOTOCURRENTS; STEADY STATE MINORITY CARRIER DIFFUSION LENGTH; VACUUM CHAMBERS;

PHOTODIODES;

EID: 5344228427     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1321     Document Type: Article

References (12)

1. W. E. Tennant, C. A. Cockrum, J. B. Gilpin, M. A. Kinch, M. B. Reine and R. P. Ruth: J. Vac. Sci. & Technol. B 10 (1992) 1359.
2. G. L. Destefanis: Semicond. Sci. Technol. 6 (1992) C88.
3. R. Balcerak: J. Vac. Sci. & Technol. B 10 (1992) 1353.
4. M. B. Reine, A. K. Sood and T. J. Tredwell: Semiconductors and Semimetals, eds. R. K. Williardson and A. C. Beer (Academic Press, New York, 1981) Vol. 18, p. 238.
5. W. H. Hackett, Jr.: J. Appl. Phys. 43 (1972) 1649.
6. M. Lanir, A. H. B. Vanderwyck and C. C. Wang: J. Appl. Phys. 49 (1979) 6182.
7. D. L. Polla, S. P. Tobin, M. B. Reine and A. K. Sood: J. Appl. Phys. 52 (1981) 5182.
8. J. J. Oakes, I. G. Greenfield and L. D. Partain: J. Appl. Phys. 48 (1977) 2548.
9. L. Jastrzebski, J. Lagowski and H. C. Gatos: Appl. Phys. Lett. 27 (1975) 537.
10. R. Fastow and Y. Nemirovsky: J. Vac. Sci. & Technol. A 8 (1990) 1245.
11. W. A. Radford, J. F. Shanley and O. L. Doyle: J. Vac. Sci. & Technol. A 1 (1983) 1700.
12. W. H. Hayt, Jr.: Engineering Electromagnetics (McGraw-Hill, New York) 4th ed., p. 375.