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Volumn 112, Issue 20, 2008, Pages 7693-7697

Growth mechanisms of quantum ring self-assembly upon droplet epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; CRYSTAL GROWTH; DROP FORMATION; DROPS; EPITAXIAL GROWTH; FLUID MECHANICS; INDIUM ARSENIDE; ION BEAM ASSISTED DEPOSITION; MECHANISMS; NANORINGS; NANOSTRUCTURES; SURFACE CHEMISTRY; SURFACE DIFFUSION; SURFACE TENSION; THERMODYNAMICS;

EID: 53349174199     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp801528r     Document Type: Article
Times cited : (33)

References (26)
  • 25
    • 53349108092 scopus 로고    scopus 로고
    • It was reported that the first monolayer of Ga is consumed for the formation of GaAs layer and that the rest of Ga form droplets on the GaAs layer as in ref 4
    • It was reported that the first monolayer of Ga is consumed for the formation of GaAs layer and that the rest of Ga form droplets on the GaAs layer as in ref 4.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.