Total ionizing dose and single event effects hardness assurance qualification issues for microelectronics

IEEE Transactions on Nuclear Science

Volumn 55, Issue 4, 2008, Pages 1926-1946

  Shaneyfelt, Marty R ^a   Schwank, James R ^a   Dodd, Paul E ^a   Felix, James A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Integrated circuit radiation effects; Integrated circuit reliability; Proton induced single event latchup; Radiation effects; Radiation hardening (electronics); Radiation hardness assurance; Radiation hardness assurance methodology

Indexed keywords

HARDNESS; INTEGRATED CIRCUITS; IONIZING RADIATION; MICROELECTRONICS; PARTICLE ACCELERATORS; RADIATION EFFECTS; SECONDARY EMISSION; TESTING;

INTEGRATED CIRCUIT RADIATION EFFECTS; INTEGRATED CIRCUIT RELIABILITY; PROTON-INDUCED SINGLE-EVENT LATCHUP; RADIATION HARDENING (ELECTRONICS); RADIATION HARDNESS ASSURANCE; RADIATION HARDNESS ASSURANCE METHODOLOGY;

HARDNESS TESTING;

EID: 53349153342     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2001268     Document Type: Conference Paper

References (111)

1. T. R. Oldham, A. J. Lelis, H. E. Boesch, J. M. Benedetto, F. B. McLean, and J. M. McGarrity, "Post-irradiation effects in field-oxide isolation structures," IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp. 1184-1189, Dec. 1987.
2. M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, and R. S. Flores, "Challenges in hardening technologies using shallow-trench isolation," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2584-2592, Dec. 1998.
3. A. J. Lelis, T. R. Oldham, and W. M. Delancey, "Response of interface traps during high-temperature anneals," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1590-1597, Dec. 1991.
4. D. M. Fleetwood, F. V. Thome, S. S. Tsao, P. V. Dressendorfer, V. J. Dandini, and J. R. Schwank, "High-temperature silicon-on-insulator electronics for space nuclear power systems: Requirements and feasibility," IEEE Trans. Nucl. Sci., vol. 35, no. 5, pp. 1099-1112, Oct. 1988.
5. D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, "A reevaluation of worst-case postirradiation response for hardened MOS transistors," IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp. 1178-1183, Dec. 1987.
6. 2 interface," J. Appl. Phys., vol. 54, no. 3, pp. 1457-1460, Mar. 1983.
7. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, "Physical mechanisms contributing to device rebound," IEEE Trans. Nucl. Sci., vol. NS-31, no. 6, pp. 1434-1438, Dec. 1984.
8. D. M. Fleetwood, P. S. Winokur, and J. R. Schwank, "Using laboratory x-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1497-1505, Dec. 1988.
9. D. M. Fleetwood, P. S. Winokur, L. C. Riewe, and R. L. Pease, "An improved standard total dose test for CMOS space electronics," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 1963-1970, Dec. 1989.
10. P. S. Winokur, H. E. Boesch, Jr, J. M. McGarrity, and F. B. McLean, "Field- and time-dependent radiation effects at the SiOs/Si interface of hardened MOS capacitors," IEEE Trans. Nucl. Sci., vol. NS-24, no. 6, pp. 2113-2118, Dec. 1977.
11. N. S. Saks, C. M. Dozier, and D. B. Brown, "Time dependence of interface trap formation in MOSFETs following pulsed irradiation," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1168-1177, Dec. 1988.
12. D. M. Fleetwood, P. S. Winokur, and T. L. Meisenheimer, "Hardness assurance for low-dose space applications," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1552-1559, Dec. 1991.
13. F. W. Sexton, D. M. Fleetwood, C. C. Aldridge, G. Garrett, J. C. Pelletier, and J. I. Gaona, "Qualifying commercial ICs for space total-dose environments," IEEE Trans. Nucl. Sci., vol. 39, no. 6, pp. 1869-1875, Dec. 1992.
14. D. M. Fleetwood, S. S. Tsao, and P. S. Winokur, "Total-dose hardness assurance issues for SOI MOSFETs," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1361-1367, Dec. 1988.
15. D. M. Fleetwood, P. S. Winokur, C. E. Barnes, and D. C. Shaw, "Accounting for time-dependent effects on CMOS total-dose response in-space environments," Radiation Phys. Chem., vol. 43, no. 1-2, pp. 129-138, Jan.-Feb. 1994.
16. M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, and P. S. Winokur, "Effects of irradiation temperature on MOS radiation response," IEEE Trans. Nucl. Sci., vol. 45, no. 3, pp. 1372-1378, Jun. 1998.
17. P. V. Dressendorfer, J. M. Soden, J. J. Harrington, and T. V. Nordstrom, "The effects of test conditions on MOS radiation-hardness results," IEEE Trans. Nucl. Sci., vol. NS-28, no. 6, pp. 4281-4287, Dec. 1981.
18. T. Stanley, D. Neamen, P. Dressendorfer, J. Schwank, P. Winokur, M. Ackermann, K. Jungling, C. Hawkins, and W. Grannemann, "The effect of operating frequency in the radiation induced buildup of trapped holes and interface states in MOS devices," IEEE Trans. Nucl. Sci., vol. NS-32, no. 6, pp. 3982-3987, Dec. 1985.
19. D. M. Fleetwood, P. S. Winokur, and L. C. Riewe, "Predicting switched-bias response from steady-state irradiations MOS transistors," IEEE Trans. Nucl. Sci., vol. 37, no. 6, pp. 1806-1817, Dec. 1990.
20. P. S. Winokur, M. R. Shaneyfelt, T. L. Meisenheimer, and D. M. Fleetwood, "Advanced qualification techniques," IEEE Trans. Nucl. Sci., vol. 41, no. 3, pp. 538-548, Jun. 1994.
21. E. W. Enlow, R. L. Pease, W. Combs, R. D. Schrimpf, and R. N. Nowlin, "Response of advanced bipolar processes to ionizing radiation," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1342-1351, Dec. 1991.
22. R. N. Nowlin, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, and W. E. Combs, "Hardness-assurance and testing issues for bipolar/BiCMOS devices," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1686-1693, Dec. 1993.
23. A. Wei, S. L. Rosier, R. D. Schrimpf, D. M. Fleetwood, and W. E. Combs, "Dose-rate effects on radiation-induced bipolar junction transistor gain degradation," Appl. Phys. Lett., vol. 65, no. 15, pp. 1918-1920, Oct. 1994.
24. A. H. Johnston, G. M. Swift, and B. G. Rax, "Total dose effects in conventional bipolar transistors and linear integrated circuits," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2427-2436, Dec. 1994.
25. D. M. Fleetwood, S. L. Kosier, R. N. Nowlin, R. D. Schrimpf, R. A. Reber, M. DeLaus, P. S. Winokur, A. Wei, W. E. Combs, and R. L. Pease, "Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 1871-1883, Dec. 1994.
26. S. McClure, R. L. Pease, W. Will, and G. Perry, "Dependence of total dose response of bipolar linear microcircuits on applied dose rate," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2544-2549, Dec. 1994.
27. S. C. Witczak, R. C. Lacoe, D. C. Mayer, D. M. Fleetwood, R. D. Schrimpf, and K. F. Galloway, "Space charge limited degradation of bipolar oxides at low electric fields," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2339-2351, Dec. 1998.
28. M. R. Shaneyfelt, J. R. Schwank, S. C. Witczak, D. M. Fleetwood, R. L. Pease, P. S. Winokur, L. C. Riewe, and G. L. Hash, "Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2539-2545, Dec. 2000.
29. D. M. Fleetwood, L. C. Riewe, J. R. Schwank, S. C. Witczak, and R. D. Schrimpf, "Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2537-2546, Dec. 1996.
30. D. M. Schmidt, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, R. J. Graves, G. H. Johnson, K. F. Galloway, and W. E. Combs, "Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs," IEEE Trans. Nucl. Sci., vol. 42, no. 6, pp. 1541-1549, Dec. 1995.
31. R. L. Pease, S. McClure, A. H. Johnston, J. Gorelick, T. L. Turflinger, M. Gehlhausen, J. Krieg, T. Carriere, and M. Shaneyfelt, "An updated data compendium of enhanced low dose rate sensitive (ELDRS) bipolar linear circuits," in IEEE Radiation Effects Data Workshop Record, Vancouver, BC, Canada, Jul. 16-20, 2001, pp. 127-133.
32. S. C. Witczak, R. D. Schrimpf, K. F. Galloway, D. M. Fleetwood, R. L. Pease, J. M. Puhl, D. M. Schmidt, W. E. Combs, and J. S. Suehle, "Accelerated tests for simulating low dose rate gain degradation of lateral and substrate PNP bipolar junction transistors," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 3151-3160, Dec. 1996.
33. R. L. Pease, L. M. Cohn, D. M. Fleetwood, M. A. Gehlhausen, T. L. Turflinger, D. B. Brown, and A. H. Johnston, "A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 1981-1988, Dec. 1997.
34. R. L. Pease, M. Gehlhausen, J. Krieg, J. Titus, T. Turflinger, D. Emily, and L. Cohn, "Evaluation of proposed hardness assurance method for bipolar linear circuits with enhanced low dose rate sensitivity (ELDRS)," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2665-2672, Dec. 1998.
35. A. H. Johnston, C. I. Lee, and B. G. Rax, "Enhanced damage in bipolar devices at low dose rates: Effects at very low dose rates," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 3049-3059, Dec. 1996.
36. T. Carriere, R. Ecoffet, and P. Poirot, "Evaluation of accelerated total dose testing of linear bipolar circuits," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2350-2357, Dec. 2000.
37. S. C. Witczak, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, R. C. Lacoe, D. C. Mayer, J. M. Puhl, R. L. Pease, and J. S. Suehle, "Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 1989-2000, Dec. 1997.
38. M. R. Shaneyfelt, R. L. Pease, J. R. Schwank, J. A. Felix, M. C. Maher, D.M. Fleetwood, and P. E. Dodd, "Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3172-3177, Dec. 2004.
39. J. R. Schwank, F. W. Sexton, D. M. Fleetwood, R. V. Jones, R. S. Flores, M. S. Rodgers, and K. L. Hughes, "Temperature effects on the radiation response of MOS devices," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1432-1437, Dec. 1988.
40. S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, "Effects of hydrogen motion on interface trap formation and annealing," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3158-3165, Dec. 2004.
41. M. R. Shaneyfelt, R. L. Pease, J. R. Schwank, M. C. Maher, G. L. Hash, D. M. Fleetwood, P. E. Dodd, C. A. Reber, S. C. Witczak, L. C. Riewe, H. P. Hjalmarson, J. C. Banks, B. L. Doyle, and J. A. Knapp, "Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3171-3179, Dec. 2002.
42. M. R. Shaneyfelt, R. L. Pease, M. C. Maher, J. R. Schwank, S. Gupta, P. E. Dodd, and L. C. Riewe, "Passivation layers for reduced total dose effects and ELDRS in linear bipolar devices," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1784-1790, Dec. 2003.
43. J. E. Seiler, D. G. Platteter, G. W. Dunham, R. L. Pease, M. C. Maher, and M. R. Shaneyfelt, "Effect of passivation on the enhanced low dose rate sensitivity of National LM124 operational amplifiers," in Proc. IEEE Radiation Effects Data Workshop (REDW) Held in Conjunction With the IEEE Nuclear and Space Radiation Effects Conference (NSREC), Atlanta, GA, Jul. 22, 2004, pp. 42-46.
44. M. R. Shaneyfelt, M. C. Maher, R. C. Camilletti, J. R. Schwank, R. L. Pease, B. A. Russell, and P. E. Dodd, "Elimination of enhanced low-dose-rate sensitivity in linear bipolar devices using silicon-carbide passivation," IEEE Trans. Nucl. Sci., vol. 53, no. 4, pp. 2027-2032, Aug. 2006.
45. G. Carlotti, L. Doucet, and M. Dupeux, "Comparative study of the elastic properties of silicate glass films grown by plasma enhanced chemical vapor," J. Vac. Sci.. Tech. B, vol. 14, no. 6, pp. 3460-3464, Nov.-Dec. 1996.
46. T. H. T. Wu and R. S. Rosier, "Stress in PSG and nitride films as related to film properties and annealing," Solid State Tech., vol. 35, no. 5, pp. 65-72, May 1992.
47. R. L. Pease, D. Platteter, G. Dunham, J. Seiler, S. McClure, H. Barnaby, and X. J. Chen, "The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2168-73, Dec. 2007.
48. M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, T. L. Meisenheimer, and P. S. Winokur, "Effects of burn-in on radiation hardness," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2550-2559, Dec. 1994.
49. M. R. Shaneyfelt, P. S. Winokur, D. M. Fleetwood, J. R. Schwank, and R. A. Reber, "Effects of reliability screens on MOS charge trapping," IEEE Trans. Nucl. Sci., vol. 43, no. 3, pp. 865-872, Jun. 1996.
50. M. R. Shaneyfelt, P. S. Winokur, D. M. Fleetwood, G. L. Hash, J. R. Schwank, F. W. Sexton, and R. L. Pease, "Impact of aging on radiation hardness," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2040-2047, Dec. 1997.
51. S. D. Clark, J. P. Bings, M. C. Maher, M. K. Williams, D. R. Alexander, and R. L. Pease, "Plastic packaging and burn-in effects on ionizing dose response in CMOS microcircuits," IEEE Trans. Nucl. Sci., vol. 42, no. 6, pp. 1607-1614, Dec. 1995.
52. R. L. Pease, M. Shaneyfelt, P. Winokur, D. Fleetwood, J. Gorelick, S. McClure, S. Clark, L. Cohn, and D. Alexander, "Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 1425-1430, Jun. 1998.
53. C. Barillot, O. Serres, R. Marec, and P. Calvel, "Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2638-2643, Dec. 1998.
54. 2 -on-Si structures," J. Appl. Phys., vol. 58, no. 7, pp. 2524-2533, 1985.
55. M. R. Shaneyfelt, K. L. Hughes, J. R. Schwank, F. W. Sexton, D. M. Fleetwood, P. S. Winokur, and E. W. Enlow, "Wafer-level radiation testing for hardness assurance," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1598-1605, Dec. 1991.
56. D. M. Fleetwood, P. S. Winokur, R. W. Beegle, P. V. Dressendorfer, and B. L. Draper, "Accounting for dose-enhancement effects with CMOS transistors," IEEE Trans. Nucl. Sci., vol. NS-32, no. 6, pp. 4369-4375, Dec. 1985.
57. J. R. Schwank, M. R. Shaneyfelt, P. E. Dodd, V. Ferlet-Cavrois, R. A. Loemker, P. S. Winokur, D. M. Fleetwood, P. Paillet, J. L. Leray, B. L. Draper, S. C. Witczak, and L. C. Riewe, "Correlation between Co-60 and x-ray radiation-induced charge buildup in silicon-on-insulator buried oxides," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2175-2182, Dec. 2000.
58. R. L. Pease, M. Simons, and P. Marshall, "Comparison of pMOSFET total dose response for Co-60 gammas and high-energy protons," IEEE Trans. Nucl. Sci., vol. 48, no. 3, pp. 908-912, Jun. 2001.
59. 2: Direct- measurement of the drift mobility and lifetime," Phys. Rev. Lett., vol. 30, no. 26, pp. 1333-1336, 1973.
60. 2 -films," Appl. Phys. Lett., vol. 26, no. 8, pp. 436-438, 1975.
61. 2," in Ionizing Radiation Effects in MOS Devices and Circuits, T. P. Ma and P. V. Dressendorfer, Eds. New York: Wiley, 1989, pp. 87-192.
62. M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, and K. L. Hughes, "Charge yield for cobalt-60 and 10-keV x-ray irradiations of MOS devices," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1187-1194, Dec. 1991.
63. P. Paillet, J. R. Schwank, M. R. Shaneyfelt, V. Ferlet-Cavrois, R. L. Jones, O. Flament, and E. W. Blackmore, "Total dose hardness assurance testing using laboratory radiation sources," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2310-2315, Dec. 2003.
64. T. R. Oldham, "Analysis of damage in MOS devices for several radiation environments," IEEE Trans. Nucl. Sci., vol. NS-31, no. 6, pp. 1236-1241, Dec. 1984.
65. E. G. Stassinopoulos and J. P. Raymond, "The space radiation environment for electronics," Proc. IEEE, vol. 76, no. 11, pp. 1423-1442, Nov. 1988.
66. L. J. Lorence and J. 1997, "Radiation transport phenomena and modeling," in Proc. IEEE Nuclear and Space Radiation Effects Conf. Short Course, Snowmasss, CO, Jul. 1997, pp. IIA-1-IIA-29.
67. J. R. Schwank, M. R. Shaneyfelt, P. Paillet, D. E. Beutler, V. FerletCavrois, B. L. Draper, R. A. Loemker, P. E. Dodd, and F. W. Sexton, "Optimum laboratory radiation source for hardness assurance testing," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 2152-2157, Dec. 2001.
68. M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, K. L. Hughes, and F. W. Sexton, "Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices," IEEE Trans. Nucl. Sci., vol. 37, no. 6, pp. 1632-1640, Dec. 1990.
69. C. M. Dozier and D. B. Brown, "Effect of photon energy on the response of MOS devices," IEEE Trans. Nucl. Sci., vol. NS-28, no. 6, pp. 4137-4141, Dec. 1981.
70. C. M. Dozier and D. B. Brown, "Photon energy dependence of radiation effects in MOS structures," IEEE Trans. Nucl. Sci., vol. NS-27, no. 6, pp. 1694-1699, Dec. 1980.
71. 2 from a microdosimetty viewpoint," IEEE Trans. Nucl. Sci., vol. 28, no. 6, pp. 4142-4144, Dec. 1981.
72. C. M. Dozier, D. M. Fleetwood, D. B. Brown, and P. S. Winokur, "An evaluation of low-energy x-ray and Co-60 irradiations of MOS-ttansistors," IEEE Trans. Nucl. Sci., vol. NS-34, no. 6, pp. 1535-1539, Dec. 1987.
73. 2: Processing effects and implications for radiation hardening," IEEE Trans. Nucl. Sci., vol. NS-21, no. 1, pp. 73-80, Feb. 1974.
74. F. W. Sexton and J. R. Schwank, "Correlation of radiation effects in transistors and integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-32, no. 6, pp. 3975-3981, Dec. 1985.
75. V. Ferlet-Cavrois, T. Colladant, P. Paillet, J. L. Leray, O. Musseau, J. R. Schwank, M. R. Shaneyfelt, J. L. Pelloie, and J. D. d. Poncharra, "Worst-case bias during total dose irradiation of SOI transistors," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2183-2188, Dec. 2000.
76. S. T. Liu, S. Balster, S. Sinha, and W. C. Jenkins, "Worst case total dose radiation response of 0.35 μm SOI CMOS FETs," IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1817-1823, Dec. 1999.
77. W. C. Jenkins and S. T. Liu, "Radiation response of fully-depleted MOS transistors fabricated in SIMOX," IEEE Trans. Nucl. Sci., vol. 41, pp. 2317-2321, Dec. 1994.
78. J. R. Schwank, M. R. Shaneyfelt, P. E. Dodd, J. A. Burns, C. L. Keast, and P. W. Wyatt, "New insights into fully-depleted SOI transistor response after total-dose irradiation," IEEE Trans. Nucl. Sci., vol. 47, no. 3, pp. 604-612, Jun. 2000.
79. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, "Correlating the radiation response of MOS capacitors and transistors," IEEE Trans. Nucl. Sci., vol. NS-31, no. 6, pp. 1453-1460, Dec. 1984.
80. D. M. Fleetwood and H. A. Eisen, "Total-dose radiation hardness assurance," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 552-564, Jun. 2003.
81. F. B. McLean and H. E. Boesch, "Time-dependent degradation of MOSFET channel mobility following pulsed irradiation," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 1772-1783, Dec. 1989.
82. D. Zupac, K. F. Galloway, P. Khosropour, S. R. Anderson, R. D. Schrimpf, and P. Calvel, "Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1307-1315, Dec. 1993.
83. M. R. Shaneyfelt, J. R. Schwank, P. E. Dodd, G. L. Hash, P. Paillet, and J. A. F. J. B. Ferlet-Cavrois, "Implications of characterization temperature on hardness assurance qualification," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3132-3138, Dec. 2006.
84. E. W. Blackmore, "Operation of the TRIUMF (20-500 MeV) proton irradiation facility," in 2000 IEEE Radiation Effects Data Workshop. Workshop Record, Reno, NV, Jul. 2000, pp. 1-5.
85. G. F. Derbenwick and H. H. Sander, "CMOS hardness prediction for low-dose-rate environments," IEEE Trans. Nucl. Sci., vol. NS-24, no. 6, pp. 2244-2247, Dec. 1977.
86. A. H. Johnston, "The influence of VLSI technology evolution on radiation-induced latchup in space systems," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 505-521, Apr. 1996.
87. M. Shoga and D. Binder, "Theory of single event latchup in complementary metal-oxide semiconductor integrated-circuits," IEEE Trans. Nucl. Sci., vol. NS-33, no. 6, pp. 1714-1717, Dec. 1986.
88. L. S. Smith, D. K. Nichols, J. R. Coss, W. E. Price, and D. Binder, "Temperature and EPI thickness dependence of the heavy-ion induced latchup threshold for a CMOS/EPI 16 K static RAM," IEEE Trans. Nucl. Sci., vol. NS-34, no. 6, pp. 1800-1802, Dec. 1987.
89. A. H. Johnston, B. W. Hughlock, M. P. Baze, and R. E. Plaag, "The effect of temperature on single-particle latchup," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1435-1441, Dec. 1991.
90. J. R. Schwank, M. R. Shaneyfelt, J. Baggio, P. E. Dodd, J. A. Felix, V. Ferlet-Cavrois, P. Paillet, D. Lambert, F. W. Sexton, G. L. Hash, and E. Blackmore, "Effects of particle energy on proton-induced single-event latchup," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2622-2629, Dec. 2005.
91. K. A. LaBel, P. W. Marshall, J. L. Barth, R. B. Katz, R. A. Reed, H. W. Leidecker, H. S. Kim, and C. J. Marshall, "Anatomy of an in-flight anomaly: Investigation of proton-induced see test results for stacked IBM drams," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2898-2903, Dec. 1998.
92. D. M. Hiemstra and E. W. Blackmore, "Let spectra of proton energy levels from 50 to 500 MeV and their effectiveness for single event effects characterization of microelectronics," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2245-2250, Dec. 2003.
93. J. R. Schwank, M. R. Shaneyfelt, J. Baggio, P. E. Dodd, J. A. Felix, V. Ferlet-Cavrois, P. Paillet, G. K. Lum, S. Girard, and E. Blackmore, "Effects of angle of incidence on proton and neutron-induced singleevent latchup," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3122-31, Dec. 2006.
94. J. R. Schwank, P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, G. L. Hash, V. Ferlet-Cavrois, P. Paillet, J. Baggio, P. Tangyunyong, and E. Blackmore, "Issues for single-event proton testing of SRAMs," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3692-3700, Dec. 2004.
95. A. B. Campbell and W. J. Stapor, "The total dose dependence of the single event upset sensitivity of IDT static RAMs," IEEE Trans. Nucl. Sci., vol. NS-31, no. 6, pp. 1175-1177, Dec. 1984.
96. B. L. Bhuva, R. L. Johnson, R. S. Gyurcsik, K. W. Fernald, S. E. Kerns, W. J. Stapor, A. B. Campbell, and M. A. Xapsos, "Quantification of the memory effect for a charged particle environment," IEEE Trans. Nucl. Sci., vol. NS-34, no. 6, pp. 1414-1418, Dec. 1987.
97. C. L. Axness, J. R. Schwank, P. S. Winokur, J. S. Browning, R. Koga, and D. M. Fleetwood, "Single event upset in irradiated 16 K CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1602-1607, Dec. 1988.
98. E. G. Stassinopoulos, G. J. Brucker, O. V. Gunten, and H. S. Kim, "Variation in SEU sensitivity of dose-implanted CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 2330-2338, Dec. 1989.
99. J. R. Schwank, M. R. Shaneyfelt, J. A. Felix, P. E. Dodd, J. Baggio, V. Ferlet-Cavrois, P. Paillet, G. L. Hash, R. S. Flores, L. W. Massengill, and E. Blackmore, "Effects of total dose irradiation on single-event upset hardness," IEEE Trans. Nucl. Sci., vol. 53, no. 4, pp. 1772-1778, Aug. 2006.
100. E. G. Stassinopoulos and J. P. Raymond, "The space radiation environment for electronics," Proc. IEEE, vol. 76, no. 11, pp. 1423-1442, Nov. 1988.
101. W. J. Stapor, P. T. McDonald, A. R. Knudson, A. B. Campbell, and B. G. Glagola, "Charge collection in silicon for ions of different energy but same linear energy transfer (LET)," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1585-1590, Dec. 1988.
102. T. L. Criswell, P. R. Measel, and K. L. Wahlin, "Single event upset testing with relativistic heavy ions," IEEE Trans. Nucl. Sci., vol. NS-31, no. 6, pp. 1559-1562, Dec. 1984.
103. S. Duzellier, D. Falguère, L. Moulière, R. Ecoffet, and J. Buisson, "See results using high energy ions," IEEE Trans. Nucl. Sci., vol. 42, no. 6, pp. 1797-1802, Dec. 1995.
104. O. Musseau, F. Gardic, P. Roche, T. Corbière, R. A. Reed, S. Buchner, P. McDonald, J. Melinger, L. Tran, and A. B. Campbell, "Analysis of multiple bit upsets (MBU) in a CMOS SRAM," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2879-2888, Dec. 1996.
105. R. Ecoffet, S. Duzellier, D. Falguère, L. Guibert, and C. Inguimbert, "Low let cross-section measurements using high energy carbon beam," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2230-2236, Dec. 1997.
106. R. Koga, S. H. Crain, W. R. Crain, K. B. Crawford, and S. J. Hansel, "Comparative SEU sensitivies to relativistic heavy ions," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2475-2482, Dec. 1998.
107. P. E. Dodd, O. Musseau, M. R. Shaneyfelt, F. W. Sexton, C. D'hose, G. L. Hash, M. Martinez, R. A. Loemker, J.-L. Leray, and P. S. Winokur, "Impact of ion energy on single-event upset," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2483-2491, Dec. 1998.
108. K. M. Warren, R. A. Weller, M. H. Mendenhall, R. A. Reed, D. R. Ball, C. L. Howe, B. D. Olson, M. L. Alles, L. W. Massengill, R. D. Schrimpf, N. F. Haddad, S. E. Doyle, D. McMorrow, J. S. Melinger, and W. T. Lotshaw, "The contribution of nuclear reactions to heavy ion single event upset cross section measurements in a high-density SEU hardened SRAM," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2125-2131, Dec. 2005.
109. R. A. Reed, R. A. Weller, R. D. Schrimpf, M. H. Mendenhall, K. M. Warren, and L. W. Massengill, "Implications of nuclear reactions for single event effects test methods and analysis," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3356-3362, Dec. 2006.
110. P. E. Dodd, J. R. Schwank, M. R. Shaneyfelt, V. Ferlet-Cavrois, P. Paillet, J. Baggio, G. L. Hash, J. A. Felix, K. Hirose, and H. Saito, "Heavy ion energy effects in CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp. 889-893, Aug. 2007.
111. C. L. Howe, R. A. Weller, R. A. Reed, M. H. Mendenhall, R. D. Schrimpf, K. M. Warren, D. R. Ball, L. W. Massengill, K. A. LaBel, J. W. Howard, Jr, and N. F. Haddad, "Role of heavy-ion nuclear reactions in determining on-orbit single event error rates," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2182-2188, Dec. 2005.