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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 5, 2008, Pages 1696-1699

Growth of nitrogen doped ZnO films through a nitrogen diffusion process from WN films formed by a cosputtering technique

(5) Lee, Jonghyun a Ha, Jaehwan a Hong, Jinpyo a Cha, Seungnam b Paik, Ungyu a

a Hanyang University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; FILM GROWTH; MARKOV PROCESSES; METALLIC FILMS; NITRIDES; NITROGEN; SEMICONDUCTING ZINC COMPOUNDS; TUNGSTEN; TUNGSTEN COMPOUNDS; ZINC ALLOYS;

CO-SPUTTERING; ELECTRICAL PROPERTIES; GLASS SUBSTRATES; HALL CONCENTRATION; HIGH-QUALITY; IN-SITU; N DOPING; NITROGEN ATOMS; NITROGEN DIFFUSION; NITROGEN DOPING; POST-THERMAL ANNEALING; PURE ZNO; TUNGSTEN NITRIDE; ZNO FILMS;

ZINC OXIDE;

EID: 53349091670 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.2968706 Document Type: Article

Times cited : (6)

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