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1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 253-256

6H-and 4H-silicon carbide for device applications

(3) Bakin, A S a Dorozhkin, S I a Zubrilov, A S b

a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI (Russian Federation)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; LIGHT ABSORPTION; MAPPING; OPTOELECTRONIC DEVICES;

4H SILICON CARBIDE; DEVICE APPLICATION; HIGH-TEMPERATURE ELECTRONICS; OPERATION TEMPERATURE; OPTICALLY TRANSPARENT CRYSTALS; RADIATION-HARDENED; SUBLIMATION METHODS; TRANSPARENT SUBSTRATE;

SILICON CARBIDE;

EID: 53349090953 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/HITEC.1998.676798 Document Type: Conference Paper

Times cited : (2)

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