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Volumn , Issue , 1998, Pages 253-256
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6H-and 4H-silicon carbide for device applications
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Author keywords
[No Author keywords available]
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Indexed keywords
BINARY ALLOYS;
LIGHT ABSORPTION;
MAPPING;
OPTOELECTRONIC DEVICES;
4H SILICON CARBIDE;
DEVICE APPLICATION;
HIGH-TEMPERATURE ELECTRONICS;
OPERATION TEMPERATURE;
OPTICALLY TRANSPARENT CRYSTALS;
RADIATION-HARDENED;
SUBLIMATION METHODS;
TRANSPARENT SUBSTRATE;
SILICON CARBIDE;
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EID: 53349090953
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/HITEC.1998.676798 Document Type: Conference Paper |
Times cited : (2)
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References (13)
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