Al-doped ZnO/Cu2O heterojunction fabricated on (200) and (111)-orientated Cu2O substrates

Journal of the Electrochemical Society

Volumn 155, Issue 11, 2008, Pages

  Chou, Shih Min ^a   Hon, Min Hsiung ^a   Leu, Ing Chi ^b   Lee, Yueh Hsun ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRODEPOSITION; EPITAXIAL GROWTH; HEATING; LATTICE MISMATCH; MAGNETRON SPUTTERING; METALLIC FILMS; METALLIZING; MOLECULAR BEAM EPITAXY; OPTICAL DESIGN; SEMICONDUCTING ZINC COMPOUNDS; SPUTTER DEPOSITION; SUBSTRATES; SWITCHING CIRCUITS; VOLATILE ORGANIC COMPOUNDS; ZINC ALLOYS; ZINC OXIDE;

AL-DOPED ZNO; CRYSTALLINITY; CU2 O FILMS; FILL FACTOR; HETERO JUNCTION; HETERO-JUNCTION DEVICE; LATTICE MISMATCHING; OPEN-CIRCUIT VOLTAGE; PHOTOVOLTAIC CHARACTERISTICS; POTENTIOSTATIC ELECTRODEPOSITION; RADIO-FREQUENCY MAGNETRON SPUTTERING; SHORT-CIRCUIT CURRENTS; SUBSTRATE HEATING;

ALUMINUM;

EID: 52649162350     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2980424     Document Type: Article

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