Characteristics of Ni-doped IZO layers grown on IZO anode for enhancing hole injection in OLEDs

Journal of the Electrochemical Society

Volumn 155, Issue 11, 2008, Pages

  Choi, Kwang Hyuk ^a   Jeong, Jin A ^a   Kim, Han Ki ^a   Lee, Jae Young ^b   Lee, Jung Hwan ^b   Bae, Hyo Dae ^b   Tak, Yoon Heong ^b   Lee, Se Hyung ^c   Leem, Dong Seok ^c   Kim, Jang Joo ^c  

^a Kumoh National Institute of Technology   (South Korea)

^b LG Display Co Ltd   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CURRENT DENSITY; ELECTRIC POWER MEASUREMENT; ELECTRIC RESISTANCE; ELECTRON INJECTION; HELMET MOUNTED DISPLAYS; HOLE TRAPS; INDIUM; LIGHT; LIGHT EMITTING DIODES; MAGNETRON SPUTTERING; NICKEL; NICKEL ALLOYS; OPTICAL DESIGN; OPTICAL PROPERTIES; OXIDES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING ZINC COMPOUNDS; SPUTTER DEPOSITION; WORK FUNCTION; ZINC; ZINC OXIDE;

ACTIVE LAYERS; AMORPHOUS STRUCTURES; ANODE MATERIALS; DC POWER; DC-MAGNETRON SPUTTERING; DEPOSITION POWER; DOUBLE LAYERS; ELECTRICAL AND OPTICAL PROPERTIES; HIGH WORK FUNCTION; HOLE INJECTIONS; INDIUM ZINC OXIDES; INDIUM-ZINC-OXIDE; LOW-SUBSTRATE TEMPERATURE; OPTICAL TRANSMITTANCE; ORGANIC LIGHT-EMITTING DIODES; ROOM TEMPERATURES; WORK FUNCTIONS; X-RAY DIFFRACTION;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 52649120237     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2979143     Document Type: Article

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