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Volumn 79, Issue 4, 1996, Pages 1968-1972

Electrical characterization of rapid thermal nitrided and re-oxidized low-pressure chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures

(3) Ang, S S a Shi, Y J a,b Brown, W D a

a University of Arkansas (United States)

b Northeast Microelectronics Institute (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5244361529 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.361047 Document Type: Article

Times cited : (2)

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