Low oxygen and carbon incorporation in AlGaAs using tritertiarybutylaluminum in organometallic vapor phase epitaxy

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 771-774

  Wang, C A ^a   Salim, S ^b   Jensen, K F ^b   Jones, A C ^c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c Epichem Limited   (United Kingdom)

Author keywords

AlGaAs; Aluminum precursor; Organometallic vapor phase epitaxy (OMVPE); Tritertiarybutylaluminum

Indexed keywords

EID: 5244349775     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666539     Document Type: Article

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