Theoretical study on positron 2D-ACAR for semiconductors

Materials Science Forum

Volumn 255-257, Issue , 1997, Pages 184-188

  Saito, M ^a   Tang, Z ^b   Chiba, T ^c   Hasegawa, M ^b  

^a NEC CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

2D ACAR; Anisotropy; Defect; GGA; LDA; Semiconductor

Indexed keywords

ANISOTROPY; COMPUTATIONAL METHODS; CRYSTAL DEFECTS; SEMICONDUCTING DIAMONDS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

ANGULAR CORRELATION OF ANNIHILATION RADIATION (ACAR); DENSITY FUNCTIONAL THEORY;

SEMICONDUCTOR MATERIALS;

EID: 5244342040     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.255-257.184     Document Type: Article

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