Auger line shape analysis by time-of-flight positron-annihilation induced Auger-electron spectroscopy

Materials Science Forum

Volumn 255-257, Issue , 1997, Pages 769-771

  Ohdaira, T ^a   Suzuki, R ^a   Mikado, T ^a   Yamazaki, T ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Annihilation; Auger; Oxidation; PAES; Positron; Si; Surface; TOF

Indexed keywords

OXIDATION; SEMICONDUCTING SILICON;

POSITRON ANNIHILATION METHOD;

AUGER ELECTRON SPECTROSCOPY;

EID: 5244341418     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.255-257.769     Document Type: Article

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