Excitation efficiency and field non-uniformity in ZnS-based thin-film electroluminescent devices grown by atomic layer epitaxy

Semiconductor Science and Technology

Volumn 12, Issue 11, 1997, Pages 1479-1486

  Zeinert, A ^a,b   Barthou, C ^a   Benalloul, P ^a   Benoit, J ^a  

^a SORBONNE UNIVERSITÉ   (France)

^b Universite de Picardie Jules Verne   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5244332714     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/11/026     Document Type: Article

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