Resonant tunneling through a diode accumulation layer

Journal of Applied Physics

Volumn 85, Issue 5, 1999, Pages 2694-2698

  Morris, Daniel P ^a   Price, Peter J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5244331699     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369586     Document Type: Article

References (10)

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2. J. S. Wu, C. Y. Chang, C. P. Lee, K. H. Chang, D. G. Liu, and D. C. Liou, Appl. Phys. Lett. 57, 2311 (1990).
3. P. J. Price, Phys. Rev. B 45, 9042 (1992).
4. D. P. Morris (unpublished).
5. G. Garnow, Zeits. f. Physik. 53, 601 (1929);
6. M. Wagner and H. Mizuta, Phys. Rev. B 48, 14393 (1993).
7. There is not a general agreement on this particular value, but the old figure 7 eV is evidently too small. See, for example, E. E. Mendez, P. J. Price, and M. Heiblum, Appl. Phys. Lett. 45, 294 (1984);
8. W. Walukiewicz, Phys. Rev. B 37, 8530 (1988), and references therein.
9. We are disregarding the effects of a "hump" in the potential profile on the cathode side, which would to some extent modify these initial-state wave functions.
10. A more complete analysis is needed to take account of effects of scattering between double-well states. These processes will modify the result expressed by Eq. (2), especially by tending to equalize the occupation probabilities of the doublet of states with given lateral wave vector but complementary norm fractions, and thus affect the wings of the current peak.