Multiharmonic load termination effects on GaAs MESFET power amplifiers

Microwave Journal

Volumn 39, Issue 4, 1996, Pages 60-77

  Staudinger, Joe ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5244288879     PISSN: 01926225     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. L.J. Kushner, "Microwave Power Amplifier Analysis and Design," Technical Report 16, Massachusetts Institute of Technology Lincoln Laboratory, December, 1988.
2. Microwave MESFETs and HEMTs, J. Michael Golio, ed., Artech House, Norwood, MA, 1991.
3. J. Costa, M. Miller, M. Golio and G. Norris, "Fast, Accurate, On-wafer Extraction of Parasitic Resistances and Inductances in GaAs MESFETs and HEMTs," 1992 MTT-S International Symposium Digest, June 1992, pp. 1011-1014.
4. GASMAP User's Manual, Artech House, Norwood, MA, 1991.
5. J. Staudinger, et al., "Considerations for Improving the Accuracy of Large-signal GaAs MESFET Models to Predict Power Amplifier Performance," IEEE Journal of Solid-State Circuits," March 1994, pp. 366-373.